Voltage Controlled Plastic Encapsulated MOSFET GOODWORK SI2301 Featuring Low RDS ON and High Current
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
92mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 P-Channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
405pF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 is a Plastic-Encapsulated MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), rugged and reliable construction, and high saturation current capability, making it suitable for high-density applications.
Product Attributes
- Brand: DEMACHEL
- Type: SOT-23 Plastic-Encapsulate MOSFETS
- Marking Code: A1SHB
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -3 | A | |||
| Pulsed Drain Current | IDM | -10 | A | |||
| Continuous Source-Drain Diode Current | IS | -0.72 | A | |||
| Maximum Power Dissipation | PD | 1.2 | 2 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | (t5s) | 357 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-3A | 0.070 | 0.092 | ||
| Drain-source on-state resistance | RDS(on) | VGS =-2.5V, ID =-2.0A | 0.090 | 0.122 | ||
| Forward transconductance | gfs | VDS =-5V, ID =-3A | 6.5 | S | ||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 405 | pF | ||
| Output capacitance | Coss | 75 | pF | |||
| Reverse transfer capacitance | Crss | 55 | pF | |||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-3A | 5.5 | 10 | nC | |
| Total gate charge | Qg | VDS =-10V,VGS =-2.5V,ID =-3A | 3.3 | 6 | nC | |
| Gate-source charge | Qgs | 0.7 | ||||
| Gate-drain charge | Qgd | 1.3 | ||||
| Gate resistance | Rg | f =1MHz | 6.0 | |||
| Turn-on delay time | td(on) | VDD=-10V, RL=10, ID =-1A, VGEN=-4.5V,Rg=1 | 11 | 20 | ns | |
| Rise time | tr | 35 | 60 | ns | ||
| Turn-off delay time | td(off) | 30 | 50 | ns | ||
| Fall time | tf | 10 | 20 | ns | ||
| Continuous source-drain diode current | IS | TC=25 | -1.3 | A | ||
| Pulse diode forward current | ISM | -10 | ||||
| Body diode voltage | VSD | IS=-0.7A | -0.8 | -1.2 | V |
2410121536_GOODWORK-SI2301_C2938372.pdf
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