Power MOSFET GOODWORK 3080K GK with 80 Amp Continuous Drain Current and 30 Volt Drain Source Voltage
Key Attributes
Model Number:
3080K-GK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
287pF
Number:
1 N-channel
Output Capacitance(Coss):
327pF
Input Capacitance(Ciss):
2.153nF
Pd - Power Dissipation:
81W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
3080K-GK
Package:
TO-252
Product Description
Product Overview
The 3080K is an N-Channel Trench Power MOSFET designed for load switch and PWM applications. It features advanced trench technology for excellent RDS(ON) and low gate charge, offering high performance with a 30V Drain-Source Voltage and 80A Continuous Drain Current. Its low on-resistance (3.4m Typ. @ VGS=10V) and efficient design make it suitable for demanding power management tasks.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units | |
| Drain-Source Voltage | VDSS | VGS=0V,ID=250A | - | - | 30 | V | |
| Gate-Source Voltage | VGSS | - | - | - | 20 | V | |
| Continuous Drain Current (TC=25) | ID | - | - | - | 80 | A | |
| Continuous Drain Current (TC=100) | ID | - | - | - | 62 | A | |
| Pulsed Drain Current | IDM | note1 | - | - | 300 | A | |
| Single Pulsed Avalanche Energy | EAS | note2 | - | 210 | - | mJ | |
| Power Dissipation (TC=25) | PD | - | - | - | 81 | W | |
| Thermal Resistance, Junction to Case | RJC | - | - | 1.87 | - | /W | |
| Operating and Storage Temperature Range | TJ, TSTG | - | -55 | - | +175 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | - | - | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | - | 1.0 | A | |
| Gate to Body Leakage Current | IGSS | VDS=0V,VGS=20V | - | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 2.1 | 1.6 | 5 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS=10V, ID=20A, note3 | - | 3.4 | 7 | m | |
| Static Drain-Source on-Resistance | RDS(on) | VGS=4.5V, ID=20A, note3 | - | 5.7 | 9 | m | |
| Forward Transconductance | gFS | VDS=5V, ID=15A | - | 26 | - | S | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHz | - | 2153 | - | pF | |
| Output Capacitance | Coss | - | - | 327 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | - | 287 | - | pF | |
| Total Gate Charge | Qg | VDS=25V, ID=30A, VGS=10V | - | 45 | - | nC | |
| Gate-Source Charge | Qgs | - | - | 3 | - | nC | |
| Gate-Drain(Miller) Charge | Qgd | - | - | 15 | - | nC | |
| Turn-on Delay Time | td(on) | VDS=15V, ID=30A, RGEN=3, VGS=10V | - | 21 | - | ns | |
| Turn-on Rise Time | tr | - | - | 32 | - | ns | |
| Turn-off Delay Time | td(off) | - | - | 59 | - | ns | |
| Turn-off Fall Time | tf | - | - | 34 | - | ns | |
| Maximum Continuous Drain to Source DiodeForward Current | IS | - | - | - | 80 | A | |
| Maximum Pulsed Drain to Source Diode ForwardCurrent | ISM | - | - | - | 300 | A | |
| Drain to Source Diode Forward Voltage | VSD | VGS=0V, IS=30A | - | - | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=20A,dI/dt=100A/s | - | 15 | - | ns | |
| Body Diode Reverse Recovery Charge | Qrr | - | - | 4 | - | nC |
2411281058_GOODWORK-3080K-GK_C42395458.pdf
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