Electronic Circuit NPN Transistor GOODWORK MMBT4401 with Collector Current Continuous 600 Milliamps
Key Attributes
Model Number:
MMBT4401
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description
MMBT4401 NPN TRANSISTOR
The MMBT4401 is an NPN transistor designed for switching applications. It offers reliable performance with key electrical characteristics suitable for various electronic circuits.
Product Attributes
- Marking Type number: MMBT4401
- Marking code: 2X
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCBO | CollectorBase Voltage | 60 | V | |||
| VCEO | CollectorEmitter Voltage | 40 | V | |||
| VEBO | EmitterBase Voltage | 6 | V | |||
| IC | Collector Current Continuous | 600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| RthJA | Thermal Resistance From Junction To Ambient | 417 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100uA, IE = 0 | 60 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1 mA, IB = 0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 100uA, IC = 0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB = 50V, IE = 0 | 0.1 | uA | ||
| ICEX | Collector cut-off current | VCB = 50V, IE = 0 | 0.1 | uA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC =0 | 0.1 | uA | ||
| hFE1 | DC current gain | VCE = 35V, V =0.4V EB | 40 | |||
| hFE2 | DC current gain | VCE = 10V, IC = 20mA, f=100MHz | 225 | |||
| hFE3 | DC current gain | VCE = 2V, IC = 500mA | 40 | |||
| hFE4 | DC current gain | IC = 150mA, IB = 15mA | 300 | |||
| hFE5 | DC current gain | IC = 500mA, IB = 50mA | 600 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 150mA, IB = 15mA | 0.4 | 0.75 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC = 150mA, IB = 15mA | 1.2 | V | ||
| fT | Transition frequency | VCE = 30V,VBE(off)=-2V =150mA, C IC IB1=15mA | 150 | MHZ | ||
| td | Delay time | VCC = 30V, IC = 150mA IB1= 15mA | 20 | ns | ||
| tr | Rise time | IB2= 20 | 250 | ns | ||
| ts | Storage time | IC = 500mA, IB = 50mA | 0.1 | s | ||
| tf | Fall time | VCE = 10V, IC = 20mA, f=100MHz | 0.1 | s | ||
| Cib | Capacitance | VCE = 1V, IC=1mA | 10 | pF | ||
| Cob | Capacitance | VCE = 1V, IC=0.1mA | 10 | pF |
2410010232_GOODWORK-MMBT4401_C909762.pdf
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