N Channel Enhancement Mode Transistor GOODWORK BSS138DW Featuring Fast Switching And Low On State Resistance
Key Attributes
Model Number:
BSS138DW
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
1.2Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
2 N-Channel
Output Capacitance(Coss):
5.5pF
Pd - Power Dissipation:
280mW
Input Capacitance(Ciss):
30.6pF
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
BSS138DW
Package:
SOT-363
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high-efficiency, fast-switching applications, offering improved dv/dt capability, fast switching, and embedded ESD protection up to 2KV. Available as a Green Device.
Product Attributes
- Brand: BSS138DW
- Certifications: Green Device
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 55 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current – Continuous (TA=25°C) | 0.3 | A | |||
| ID | Drain Current – Continuous (TA=70°C) | 0.2 | A | |||
| IDM | Drain Current – Pulsed1 | 0.9 | A | |||
| PD | Power Dissipation (TA=25°C) | 0.28 | W | |||
| PD | Power Dissipation – Derate above 25°C | 0.002 | W/°C | |||
| TSTG | Storage Temperature Range | -50 | 150 | °C | ||
| TJ | Operating Junction Temperature Range | -50 | 150 | °C | ||
| Thermal Characteristics | ||||||
| RθJA | Thermal Resistance Junction to ambient | Tc=25°C unless otherwise noted | --- | --- | 450 | °C/W |
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 55 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25°C , ID=1mA | --- | 0.04 | --- | V/°C |
| IDSS | Drain-Source Leakage Current | VDS=55V , VGS=0V , TJ=25°C | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±10 | uA |
| On Characteristics | ||||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=0.3A | --- | 1.2 | 1.5 | Ω |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=0.2A | --- | 1.3 | 2.2 | Ω |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.8 | 1.1 | 1.6 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | --- | -5 | --- | mV/°C | |
| gfs | Forward Transconductance | VDS=10V , ID=0.1A | --- | 0.24 | --- | S |
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge2,3 | VDS=55V , VGS=10V , ID=0.2A | --- | 1.1 | --- | nC |
| Qgs | Gate-Source Charge2,3 | --- | 0.1 | --- | ||
| Qgd | Gate-Drain Charge2,3 | --- | 0.23 | --- | ||
| Td(on) | Turn-On Delay Time2,3 | VDD=55V , VGS=10V , RG=6Ω ID=0.2A | --- | 3 | --- | ns |
| Tr | Rise Time2,3 | --- | 5 | --- | ns | |
| Td(off) | Turn-Off Delay Time2,3 | --- | 14 | --- | ns | |
| Tf | Fall Time2,3 | --- | 9 | --- | ns | |
| Ciss | Input Capacitance | VDS=10V , VGS=0V , F=1MHz | --- | 30.6 | --- | pF |
| Coss | Output Capacitance | --- | 5.5 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 4 | --- | pF | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 0.3 | A |
| ISM | Pulsed Source Current | --- | --- | 0.6 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25°C | --- | --- | 1.4 | V |
2412161814_GOODWORK-BSS138DW_C42415543.pdf
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