NPN General Purpose Transistor GOODWORK MMST3904 with High Collector Base Breakdown Voltage Rating
Key Attributes
Model Number:
MMST3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
60nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMST3904
Package:
SOT-323
Product Description
MMST3904 - NPN General Purpose Transistor
The MMST3904 is a high-performance NPN general purpose transistor designed for a wide range of applications. It offers complementary functionality to the MMST3906 and is housed in a compact SOT-323 package, making it suitable for space-constrained designs.
Product Attributes
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO* | IC=10A, IE=0 | 60 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO* | IC=1mA, IB=0 | 40 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO* | IE=10A, IC=0 | 5 | V | ||
| Collector Cut-off Current | ICBO* | VCB=60V, IE=0 | 60 | nA | ||
| Collector Cut-off Current | ICEX | VCE=30V, VBE(off)=3V | 50 | nA | ||
| DC Current Gain | hFE* | VCE=1V, IC=10mA, IB=1mA | 0.25 | |||
| DC Current Gain | hFE* | VCE=1V, IC=10mA | 40 | |||
| DC Current Gain | hFE* | VCE=1V, IC=100A | 70 | |||
| DC Current Gain | hFE* | VCE=1V, IC=1mA | 100 | |||
| DC Current Gain | hFE* | VCE=1V, IC=10mA | 300 | |||
| DC Current Gain | hFE* | VCE=1V, IC=50mA | ||||
| Collector-Emitter Saturation Voltage | VCE(sat)* | IC=10mA, IB=1mA | 0.25 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat)* | IC=50mA, IB=5mA | 0.3 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=10mA, IB=1mA | 0.85 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=50mA, IB=5mA | 0.95 | V | ||
| Transition Frequency | fT | VCE=20V,IC=10mA , f=100MHz | 300 | MHz | ||
| Collector Output Capacitance | Cob | VCB=5V, IE=0, f=1MHz | 4 | pF | ||
| Collector Output Capacitance | Cib | VEB=0.5V, IE=0, f=1MHz | 8 | pF | ||
| Delay Time | td | VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Rise Time | tr | VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Storage Time | ts | VCC=3V, IC=10mA, IB1= IB2=1mA | 225 | ns | ||
| Fall Time | tf | VCC=3V, IC=10mA, IB1= IB2=1mA | 75 | ns |
*Pulse test: pulse width 300s, duty cycle 2.0%.
2504101957_GOODWORK-MMST3904_C46416447.pdf
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