synchronous buck converter P channel MOSFET GOODWORK 50P03DF with low gate charge and excellent RDSON
Key Attributes
Model Number:
50P03DF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
24mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
206pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.77nF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
50P03DF
Package:
PDFN3x3-8
Product Description
Product Description
The 50P03DF is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, ensuring efficient performance. This device is guaranteed 100% EAS tested and meets RoHS and Green Product requirements, making it an ideal choice for reliable and environmentally conscious designs.
Product Attributes
- Guaranteed 100% EAS
- Green Device Available
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- RoHS and Green Product compliant
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Condition | Min. | Typ. | Max. | |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -30 | V | 10s Steady State | |||
| VGS | Gate-Source Voltage | ±25 | V | |||||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -50 | A | |||||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -32 | A | |||||
| IDM | Pulsed Drain Current | -150 | A | |||||
| EAS | Single Pulse Avalanche Energy | 125 | mJ | |||||
| IAS | Avalanche Current | -50 | A | |||||
| PD@TA=25 | Total Power Dissipation | 2.0 | W | |||||
| TSTG | Storage Temperature Range | -55 to 150 | ||||||
| TJ | Operating Junction Temperature Range | -55 to 150 | ||||||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage | -30 | V | VGS=0V, ID= -250µA | -30 | ||
| IDSS | Zero Gate Voltage Drain Current | -1 | µA | VDS= -30V, VGS=0V | -1 | |||
| IGSS | Gate to Body Leakage Current | ±100 | nA | VDS=0V, VGS= ±20V | ±100 | |||
| VGS(th) | Gate Threshold Voltage | -1.0 to -2.5 | V | VDS=VGS, ID= -250µA | -1.0 | -1.6 | -2.5 | |
| RDS(on) | Static Drain-Source on-Resistance | 8.5 | mΩ | VGS= -10V, ID= -10A | 8.5 | |||
| RDS(on) | Static Drain-Source on-Resistance | 24 | mΩ | VGS= -4.5V, ID= -5A | 17 | 24 | ||
| Ciss | Input Capacitance | 1770 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 1770 | |||
| Coss | Output Capacitance | 233 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 233 | |||
| Dynamic Characteristics | Crss | Reverse Transfer Capacitance | 206 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 206 | ||
| Qg | Total Gate Charge | 22 | nC | VDS= -15V, ID= -5A, VGS= -10V | 22 | |||
| Qgs | Gate-Source Charge | 1.0 | nC | VDS= -15V, ID= -5A, VGS= -10V | 1.0 | |||
| Qgd | Gate-Drain(Miller) Charge | 1.8 | nC | VDS= -15V, ID= -5A, VGS= -10V | 1.8 | |||
| td(on) | Turn-on Delay Time | 9 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 9 | |||
| tr | Turn-on Rise Time | 13 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 13 | |||
| Switching Characteristics | td(off) | Turn-off Delay Time | 48 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 48 | ||
| tf | Turn-off Fall Time | 20 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 20 | |||
| IS | Maximum Continuous Drain to Source Diode Forward Current | -15 | A | -15 | ||||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -60 | A | -60 | ||||
| VSD | Drain to Source Diode Forward Voltage | -1.2 | V | VGS=0V, IS= -15A | -0.8 | -1.2 | ||
| trr | Reverse Recovery Time | 64 | ns | TJ=25, VDD= -24V,IF=-2.8A, dI/dt=-100A/μs | 64 | |||
| Drain-Source Diode Characteristics | Qrr | Reverse Recovery Charge | 25 | nC | TJ=25, VDD= -24V,IF=-2.8A, dI/dt=-100A/μs | 25 | ||
| Thermal Data | RJA | Thermal Resistance Junction-Ambient | 62 | /W | 62 |
2410122026_GOODWORK-50P03DF_C21713992.pdf
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