P channel MOSFET GOODWORK AO3401A 3L featuring super low gate charge and Green Product certification
Key Attributes
Model Number:
AO3401A-3L
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
57pF
Number:
1 P-Channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
745pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
AO3401A-3L
Package:
SOT-23-3L
Product Description
Product Overview
The AO3401A is a high cell density trenched P-channel MOSFET designed for small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full function reliability approval. This device features Green Device availability, super low gate charge, and excellent CdV/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: AO (implied from part number)
- Package: SOT-23-3L
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Rating | Units | Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | -30 | V | ||||
| Gate-Source Voltage | VGS | ±12 | V | ||||
| Continuous Drain Current (TA=25) | ID@TA=25 | -4.2 | A | ||||
| Continuous Drain Current (TA=70) | ID@TA=70 | -3.6 | A | ||||
| Pulsed Drain Current | IDM | -16 | A | 2 | |||
| Total Power Dissipation (TA=25) | PD@TA=25 | 1.4 | W | 3 | |||
| Total Power Dissipation (TA=70) | PD@TA=70 | 0.9 | W | 3 | |||
| Storage Temperature Range | TSTG | -55 to 150 | |||||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||||
| Thermal Data | |||||||
| Thermal Resistance Junction-Ambient | RJA | /W | 1 | 105 | |||
| Thermal Resistance Junction-Ambient | RJA | /W | 1 (t ≤10s) | ||||
| Electrical Characteristics (TJ=25°C unless otherwise noted) | |||||||
| Static Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250µA | -30 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30V, VGS = 0V | |||
| Gate-Body Leakage Current | IGSS | ±100 | nA | VDS = 0V, VGS = ±12V | |||
| Gate-Threshold Voltage | VGS(th) | -0.7 to -1.3 | V | VDS = VGS, ID = -250µA | -0.7 | -1 | -1.3 |
| Drain-Source on-Resistance | RDS(on) | 42 to 60 | mΩ | VGS = -10V, ID = -4.2A | 42 | 60 | |
| Drain-Source on-Resistance | RDS(on) | 51 to 75 | mΩ | VGS = -4.5V, ID = -4A | 51 | 75 | |
| Drain-Source on-Resistance | RDS(on) | 60 to 90 | mΩ | VGS = -2.5V, ID = -1A | 60 | 90 | |
| Dynamic Characteristics | |||||||
| Input Capacitance | Ciss | 745 | pF | VDS = -15V, VGS =0V, f =1MHz | 745 | ||
| Output Capacitance | Coss | 70 | pF | VDS = -15V, VGS =0V, f =1MHz | 70 | ||
| Reverse Transfer Capacitance | Crss | 57 | pF | VDS = -15V, VGS =0V, f =1MHz | 57 | ||
| Switching Characteristics | |||||||
| Total Gate Charge | Qg | 8 | nC | VGS = -4.5V, VDS = -15V, ID = -4.2A | 8 | ||
| GateSource Charge | Qgs | 1.8 | nC | VGS = -4.5V, VDS = -15V, ID = -4.2A | 1.8 | ||
| GateDrain Charge | Qgd | 2.7 | nC | VGS = -4.5V, VDS = -15V, ID = -4.2A | 2.7 | ||
| Turn-on Delay Time | td(on) | 7 | ns | VGS = -10V, VDD = -15V, ID= -4.2A, RGEN = 6Ω | 7 | ||
| Rise Time | tr | 3 | ns | VGS = -10V, VDD = -15V, ID= -4.2A, RGEN = 6Ω | 3 | ||
| Turn-off Delay Time | td(off) | 30 | ns | VGS = -10V, VDD = -15V, ID= -4.2A, RGEN = 6Ω | 30 | ||
| Fall Time | tf | 12 | ns | VGS = -10V, VDD = -15V, ID= -4.2A, RGEN = 6Ω | 12 | ||
| Drain-Source Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | -1.2 | V | IS = -4.2A, VGS = 0V | -1.2 | ||
| Continuous Source Current | IS | -4.2 | A | ||||
2410121607_GOODWORK-AO3401A-3L_C22439053.pdf
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