Power MOSFET GOODWORK FDS4435 GK Featuring Low On Resistance and Green Device Option for Switching
Key Attributes
Model Number:
FDS4435-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
RDS(on):
15mΩ@10V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.25nF@15V
Pd - Power Dissipation:
2.1W
Output Capacitance(Coss):
160pF
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
FDS4435-GK
Package:
SOP-8
Product Description
Product Overview
These P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, optimized for minimal on-state resistance and superior switching performance. They are designed to withstand high energy pulses in avalanche and commutation modes, making them well-suited for high efficiency fast switching applications. Available in a Green Device option and suitable for -4.5V gate drive applications.
Product Attributes
- Brand: FDS (implied from FDS4435)
- Origin: Not specified
- Material: Not specified
- Color: Green Device Available
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| Reference to 25 , ID=-1mA | -0.03 | V/ | ||||
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=125 | -10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-8A | 15.0 | 20 | m | |
| VGS=-4.5V , ID=-5A | 25.6 | 32 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | 4 | mV/ | |||
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 6.8 | S | ||
| Qg | Total Gate Charge | VDS=-15V , VGS=-4.5V , ID=-5A | 11 | nC | ||
| Qgs | Gate-Source Charge | 3.4 | nC | |||
| Qgd | Gate-Drain Charge | 4.2 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=6 , ID=-1A | 5.8 | ns | ||
| Tr | Rise Time | 18.8 | ns | |||
| Td(off) | Turn-Off Delay Time | 46.9 | ns | |||
| Tf | Fall Time | 12.3 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , F=1MHz | 1250 | pF | ||
| Coss | Output Capacitance | 160 | pF | |||
| Crss | Reverse Transfer Capacitance | 90 | pF | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -9 | A | ||
| ISM | Pulsed Source Current | -16 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.3 | V |
2501081735_GOODWORK-FDS4435-GK_C42434484.pdf
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