Fast switching trench MOSFET with low gate charge and robust protection technology integrated in GOODWORK S8205A
Key Attributes
Model Number:
S8205A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
37mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
2 N-Channel
Output Capacitance(Coss):
330pF
Input Capacitance(Ciss):
600pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
S8205A
Package:
SOT-23-6
Product Description
Product Overview
The S8205A is a low RDS(ON) trenched N-CH MOSFET with robust protection, designed for fast switching applications. It features super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density Trench technology. This product is suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: S8205A
- Package: SOT23-6
- Technology: Trench
- Certifications: RoHS, Green Device Available
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Drain Current-Continuous | ID | 6 | A | |
| Drain Current-Pulsed | IDM | 25 | A | Note 1 |
| Maximum Power Dissipation | PD | 1.25 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 100 | /W | Note 2 |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS=±10V,VDS=0V |
| Gate Threshold Voltage | VGS(th) | 0.5 - 1.2 | V | VDS=VGS,ID=250µA |
| Drain-Source On-State Resistance | RDS(ON) | 20 - 25 | mΩ | VGS=4.5V, ID=4A |
| Drain-Source On-State Resistance | RDS(ON) | 27 - 37 | mΩ | VGS=2.5V, ID=3A |
| Forward Transconductance | gFS | 10 | S | VDS=5V,ID=4A |
| Input Capacitance | CLSS | 600 | pF | VDS=8V,VGS=0V, F=1.0MHz |
| Output Capacitance | COSS | 330 | pF | |
| Reverse Transfer Capacitance | CRSS | 140 | pF | |
| Turn-on Delay Time | td(on) | 18 | nS | VDD=10V,ID=1A VGS=4V,RGEN=10Ω |
| Turn-on Rise Time | tr | 5 | nS | |
| Turn-Off Delay Time | td(off) | 43 | nS | |
| Turn-Off Fall Time | tf | 20 | nS | |
| Total Gate Charge | Qg | 11 | nC | VDS=10V,ID=4A, VGS=4.5V |
| Gate-Source Charge | Qgs | 2.3 | nC | |
| Gate-Drain Charge | Qgd | 2.5 | nC | |
| Diode Forward Voltage | VSD | 0.8 - 1.2 | V | VGS=0V,IS=2A, Note 3 |
| Diode Forward Current | IS | 2 | A | Note 2 |
2412061650_GOODWORK-S8205A_C41399469.pdf
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