High Current N channel Enhancement Mode Power MOSFET GOODWORK 60N04 with Low Gate Charge and Performance
Key Attributes
Model Number:
60N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
138pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
2.443nF@20V
Pd - Power Dissipation:
114W
Gate Charge(Qg):
48nC@20V
Mfr. Part #:
60N04
Package:
TO-252
Product Description
Product Overview
The 60N04 is an N-channel Enhancement Mode Power MOSFET featuring advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications within power management systems. This product is 100% UIS and Vds tested for reliability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDS | 40 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25°C | 60 | A | ||
| Continuous Drain Current | ID | TC = 100°C | 38 | A | ||
| Pulsed Drain Current | IDM | (1) | 240 | A | ||
| Power Dissipation | PD | TC = 25°C | 114 | W | ||
| Single Pulsed Avalanche Energy | EAS | (2) | 100 | mJ | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Thermal Resistance, Junction to Ambient | RθJA | (3) | 1.1 | °C/W | ||
| Thermal Resistance, Junction to Case | RθJC | 0.2 | °C/W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 250µA, VGS = 0V | 40 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40V, VGS = 0V | - | - | 1.0 | µA |
| Gate-Body Leakage Current | IGSS | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.0 | 1.7 | 2.5 | V |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 10V, ID = 20A (4) | - | 5.5 | 7.5 | mΩ |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 4.5V, ID = 20A (4) | - | 9.0 | 13 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 20V, f = 1MHz | - | 2443 | - | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 20V, f = 1MHz | - | 167 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 20V, f = 1MHz | - | 138 | - | pF |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS = 10V, ID = 30A | - | 48 | - | nC |
| Gate Source Charge | Qgs | VGS = 10V, ID = 30A | - | 10 | - | nC |
| Gate Drain ("Miller") Charge | Qgd | VGS = 10V, ID = 30A | - | 10 | - | nC |
| Turn-On Delay Time | td(on) | VGS = 10V, ID = 20A, RGEN = 3Ω | - | 10 | - | ns |
| Turn-On Rise Time | tr | VGS = 10V, ID = 20A, RGEN = 3Ω | - | 28 | - | ns |
| Turn-Off Delay Time | td(off) | VGS = 10V, ID = 20A, RGEN = 3Ω | - | 40 | - | ns |
| Turn-Off Fall Time | tf | VGS = 10V, ID = 20A, RGEN = 3Ω | - | 7 | - | ns |
| Drain-Source Diode Characteristics and Max Ratings | ||||||
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | 60 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | 240 | A | |
| Drain to Source Diode Forward Voltage | VSD | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = 20A, di/dt = 100A/us | - | 11 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF = 20A, di/dt = 100A/us | - | 5 | - | nC |
2504101957_GOODWORK-60N04_C47089136.pdf
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