N Channel Super Junction MOSFET GOODWORK 600R65F with Low On Resistance and Ultra Low Gate Charge
Key Attributes
Model Number:
600R65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
600mΩ@10V,3.5A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
557pF@25V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
13.5nC@10V
Mfr. Part #:
600R65F
Package:
ITO-220AB
Product Description
Product Overview
The 600R65F is an N-Channel Super Junction MOSFET designed for high-efficiency power applications. It features low drain-source on-resistance and ultra-low gate charge, contributing to improved performance and reduced switching losses. This RoHS compliant device is 100% avalanche tested, ensuring reliability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Drain Current (DC) | ID | Tc=25°C | 7 | A | ||
| Drain Current (DC) | ID | Tc=100°C | 4.4 | A | ||
| Drain Current (Pulsed) | IDM | 28 | A | |||
| Single Pulsed Avalanche Energy | EAS | L=7mH, IAS=7A, VDD=50V, Starting TJ=25°C | 158 | mJ | ||
| Repetitive Avalanche Current | IAR | 7 | A | |||
| Repetitive Avalanche Energy | EAR | 3.2 | mJ | |||
| Power Dissipation | PD | 32 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.9 | °C/W | |||
| Thermal Resistance, Junction to Ambient | Rth(j-a) | 62.5 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250µA, VGS=0 | 650 | V | ||
| Gate Threshold Voltage | VGS(th) | ID=250µA, VDS=VGS | 2 | 4 | V | |
| Drain-Source Cut-off Current | IDSS | VDS=650V, VGS=0V | 1 | µA | ||
| Drain-Source Cut-off Current | IDSS | VDS=650V, TJ=125°C | 100 | µA | ||
| Gate Leakage Current | IGSS | VDS=0V, VGS=±30V | ±100 | nA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=3.5A | 0.5 | 0.6 | Ω | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 557 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 294 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 17 | pF | ||
| Turn-on Delay Time | td(on) | VDS=350V, ID=7A, RG=25Ω | 16 | ns | ||
| Rise Time | tr | VDS=350V, ID=7A, RG=25Ω | 13 | ns | ||
| Turn-off Delay Time | td(off) | VDS=350V, ID=7A, RG=25Ω | 35 | ns | ||
| Fall Time | tf | VDS=350V, ID=7A, RG=25Ω | 7 | ns | ||
| Total Gate Charge | Qg | VDS=400V, VGS=10V, ID=7A | 13.5 | nC | ||
| Gate-Source Charge | Qgs | VDS=400V, VGS=10V, ID=7A | 4.5 | |||
| Gate-Drain Charge | Qgd | VDS=400V, VGS=10V, ID=7A | 3.5 | |||
| Source-Drain Diode Ratings and Characteristics | ||||||
| Source Current (DC) | IS | Integral reverse diode in the MOSFET | 7 | A | ||
| Source Current (Pulsed) | ISM | 28 | A | |||
| Forward Voltage | VSD | VGS=0V, IS=7A | 1.2 | V | ||
| Reverse Recovery Time | trr | IS=7A, VGS=0V, dIS/dt=100A/us | 278 | ns | ||
| Reverse Recovery Charge | Qrr | IS=7A, VGS=0V, dIS/dt=100A/us | 2 | µC | ||
2410121620_GOODWORK-600R65F_C5807884.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
