650V Drain Source Voltage N Channel MOSFET GOODWORK 4N65F Suitable for SMPS UPS and PFC Circuits
Key Attributes
Model Number:
4N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
36W
Input Capacitance(Ciss):
670pF@25V
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
4N65F
Package:
ITO-220AB
Product Description
Product Overview
The 4N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It features a 650V breakdown voltage and a continuous drain current of 4.0A. Key advantages include fast switching, improved dv/dt capability, and 100% avalanche testing, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits.
Product Attributes
- Product Name: 4N65F
- Technology: N-Channel Enhancement Mode MOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Avalanche Current (Note 2) | IAR | 4.0 | A | |||
| Drain Current Continuous | ID | (TC = 25°C) | 4.0 | A | ||
| Drain Current Pulsed (Note 2) | IDM | 16 | A | |||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 260 | mJ | |||
| Avalanche Energy Repetitive (Note 2) | EAR | 10.6 | mJ | |||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation | PD | (TC = 25°C) | 36 | W | ||
| Junction Temperature | TJ | -55 | +150 | °C | ||
| Operating Temperature | TOPR | -55 | +150 | °C | ||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250μA | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS = 650 V, VGS = 0 V | 10 | μA | ||
| Gate-Source Leakage Current Forward | IGSS | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| Gate-Source Leakage Current Reverse | IGSS | VGS = -30 V, VDS = 0 V | -100 | nA | ||
| Breakdown Voltage Temperature Coefficient | BVΔDSS/ΔTJ | ID=250μA, Referenced to 25°C | 0.6 | V/°C | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250μA | 2.0 | 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS = 10 V, ID = 2A | 2.0 | Ω | ||
| Static Drain-Source On-State Resistance | RDS(ON) | VGS = 10 V, ID = 4A | 2.4 | Ω | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CISS | VDS = 25 V, VGS = 0V, f = 1MHz | 520 | 670 | pF | |
| Output Capacitance | COSS | VDS = 25 V, VGS = 0V, f = 1MHz | 70 | 90 | pF | |
| Reverse Transfer Capacitance | CRSS | VDS = 25 V, VGS = 0V, f = 1MHz | 8 | 11 | pF | |
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | tD(ON) | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 13 | 35 | ns | |
| Turn-On Rise Time | tR | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 45 | 100 | ns | |
| Turn-Off Delay Time | tD(OFF) | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 25 | 60 | ns | |
| Turn-Off Fall Time | tF | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 35 | 80 | ns | |
| Total Gate Charge | QG | VDS= 520V,ID = 2A, VGS= 10V (Note 1, 2) | 15 | 20 | nC | |
| Gate-Source Charge | QGS | VDS= 520V,ID = 2A, VGS= 10V (Note 1, 2) | 3.4 | nC | ||
| Gate-Drain Charge | QGD | VDS= 520V,ID = 2A, VGS= 10V (Note 1, 2) | 7.1 | nC | ||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, IS = 4.0A | 1.4 | V | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.4 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 17.6 | A | |||
| Reverse Recovery Time | trr | VGS = 0V, IS = 4.0A, dIF/dt = 100 A/μs (Note 1) | 250 | ns | ||
| Reverse Recovery Charge | QRR | VGS = 0V, IS = 4.0A, dIF/dt = 100 A/μs (Note 1) | 1.5 | μC | ||
2410121620_GOODWORK-4N65F_C5248039.pdf
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