Voltage Controlled Small Signal N Channel Transistor GOODWORK SI2328 for Electronic Applications
Key Attributes
Model Number:
SI2328
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
250mΩ@10V,1.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
3.3nC@10V
Mfr. Part #:
SI2328
Package:
SOT-23
Product Description
Product Overview
The SI2328 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON) and serving as a voltage-controlled small signal switch. It is rugged, reliable, and capable of high saturation current. This transistor is suitable for applications requiring efficient switching and low power loss.
Product Attributes
- Marking Code: D8***
- Type Number: SI2328
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=1mA, VGS=0V | 100 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 2 | 4 | V | |
| On-State Drain Current | ID(on) | VDS 15 V, VGS = 10 V | 6 | A | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=1.5A | 195 | 250 | m | |
| Forward Transconductance | gFS | VDS=15V, ID=1.5A | 4 | S | ||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=1.5A | 3.3 | 4 | nC | |
| Turn-On DelayTime | td(on) | ID=0.2A, VDS=50V, ,VGEN=10V RL=33,RG=6 | 7 | 11 | ns | |
| Turn-Off DelayTime | td(off) | ID=0.2A, VDS=50V, ,VGEN=10V RL=33,RG=6 | 9 | 15 | ns | |
| Body Diode Reverse Recovery Time | trr | IF= 1.5A, dI/dt= 100A/s | 50 | 100 | ns | |
| Maximum Body-Diode Continuous Current | IS | 1.0 | A | |||
| Diode Forward Voltage | VSD | IS=1.0A,VGS=0V | 0.8 | 1.2 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | A | ||
| Power Dissipation | PD | Surface Mounted on 1 x 1 FR4 Board. t5 sec | 1.5 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Surface Mounted on 1 x 1 FR4 Board. Steady State | 100 | 170 | /W | |
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 |
2410121807_GOODWORK-SI2328_C5807874.pdf
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