switching MOSFET GREENMICRO GM4N65GT suitable for bridge circuits and PWM motor control applications
Key Attributes
Model Number:
GM4N65GT
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
RDS(on):
2.7Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Gate Charge(Qg):
-
Mfr. Part #:
GM4N65GT
Package:
TO-220F
Product Description
Product Overview
The 4N65 is a high voltage MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.
Product Attributes
- Brand: GREENMICRO
- Model: 4N65
- Website: WWW.GREENMICRO.NET
- Version: V1.3
Technical Specifications
| Product Model | Package Type | Marking | RDS(ON) (Typ.) | VGS(th) (Typ.) | IDSS (Max.) | IGSS (Max.) | Vsd (Typ.) | V(BR)DSS (Min.) | TJ, TSTG |
| GM4N65GT | TO-220F | 4N65 282 | 2.7 @VGS= 3 V | 3 V | 1 A | 100 nA | 1.2 V | 650 V | -55to 150 |
| GM4N65GR | TO-252 | 4N65 282 | 2.7 @VGS= 3 V | 3 V | 1 A | 100 nA | 1.2 V | 650 V | -55to 150 |
| 4N65GT | TO-220F | 4N65 282 | 2.7 @VGS= 3 V | 3 V | 1 A | 100 nA | 1.2 V | 650 V | -55to 150 |
| 4N65GR | TO-252 | 4N65 0B82 | 2.7 @VGS= 3 V | 3 V | 1 A | 100 nA | 1.2 V | 650 V | -55to 150 |
2507171700_GREENMICRO-GM4N65GT_C49329009.pdf
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