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quality Switching Transistor NPN Guangdong Hottech MMBT4401 SOT23 Package Molded Plastic Electronic Component factory
quality Switching Transistor NPN Guangdong Hottech MMBT4401 SOT23 Package Molded Plastic Electronic Component factory

Switching Transistor NPN Guangdong Hottech MMBT4401 SOT23 Package Molded Plastic Electronic Component

Key Attributes
Model Number: MMBT4401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description

Product Overview

The MMBT4401 is a complementary NPN bipolar transistor designed for switching applications. It is a surface mount device housed in a SOT-23 package, offering a compact solution for various electronic circuits.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Complementary To: MMBT4403
  • Device Type: Switching Transistor
  • Package: SOT-23
  • Case Material: Molded Plastic
  • UL Flammability Classification: 94V-0

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO60V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC600mA
Collector Power DissipationPC300mWTA = 25C
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO60VIC=100uAIE=0
Collector-emitter breakdown voltageV(BR)CEO40VIC=1mAIB=0
Emitter-base breakdown voltageV(BR)EBO6VIE=100uAIC=0
Collector cut-off currentICBO0.1uAVCB=50V, IE=0
Collector cut-off currentICEX0.1uAVCE=35V, VBE=0.4V
Emitter cut-off currentIEBO0.1uAVEB=5V, IC=0
DC current gainhFE120VCE=1V, IC=0.1mA
DC current gainhFE240VCE=1V, IC=1mA
DC current gainhFE380VCE=1V, IC=10mA
DC current gainhFE4100-300VCE=1V, IC=150mA
DC current gainhFE540VCE=2V, IC=500mA
Collector-emitter saturation voltageVCE(sat)0.4VIC=150mAIB=15mA
Collector-emitter saturation voltageVCE(sat)0.75VIC=500mAIB=50mA
Base-emitter saturation voltageVBE(sat)0.95VIC=150mAIB=15mA
Base-emitter saturation voltageVBE(sat)1.2VIC=500mAIB=50mA
Transition frequencyfT250MHzVCE=10V,IC=20mA,f=100MHz
Delay timetd15nsVCC=30V, VBE(OFF)=2V, IC=150mAIB1=15mA
Rise timetr20nsVCC=30V,IC=150mA IB1=IB2=15mA
Storage timetS225nsVCC=30V,IC=150mA IB1=IB2=15mA
Fall timetf60nsVCC=30V,IC=150mA IB1=IB2=15mA

2410122030_Guangdong-Hottech-MMBT4401_C181123.pdf

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