SOT23 PNP transistor Guangdong Hottech FMMT591 low equivalent on resistance for electronic circuit
Key Attributes
Model Number:
FMMT591
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
FMMT591
Package:
SOT-23
Product Description
Product Overview
The FMMT591 is a PNP bipolar transistor housed in a SOT-23 package. It offers low equivalent on-resistance, making it suitable for various electronic applications. The device is marked with '591'.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Origin: China
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | Units |
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | -80 | V | |||
| Collector-Emitter Voltage | VCEO | -60 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current -Continuous | IC | -1 | A | |||
| Collector Power Dissipation | PC | 500 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -80 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 1 IC=-10mA, IB=0 | -60 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-60V, IE=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | -0.1 | A | ||
| DC current gain | hFE(1) | VCE=-5V, IC=-1mA | 100 | |||
| DC current gain | hFE(2) | 1 VCE=-5V, IC=-500mA | 100 | 300 | ||
| DC current gain | hFE(3) | 1 VCE=-5V, IC=-1A | 80 | |||
| DC current gain | hFE(4) | 1 VCE=-5V, IC=-2A | 15 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | 1 IC=-500mA, IB=-50mA | -0.3 | V | ||
| Collector-emitter saturation voltage | VCE(sat)2 | 1 IC=-1A, IB=-100mA | -0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | 1 IC=-1A, IB=-100mA | -1.2 | V | ||
| Base-emitter voltage | VBE | 1 VCE=-5V, IC=-1A | -1 | V | ||
| Transition frequency | fT | VCE=-10V,IC=-50mA,,f=100MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V,f=1MHz | 10 | pF | ||
| Note: 1Measured under pulsed conditions, Pulse width=300s, Duty cycle2%. | ||||||
2410121717_Guangdong-Hottech-FMMT591_C5364251.pdf
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