SOT23 Package NPN Bipolar Transistor Guangdong Hottech BC850B Designed for Automatic Insertion and Amplifier
Key Attributes
Model Number:
BC850B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC850B
Package:
SOT-23
Product Description
Product Overview
The BC850 is an NPN bipolar transistor designed for automatic insertion, making it ideal for high-volume manufacturing. It is well-suited for switching and AF amplifier applications. This surface mount device comes in a SOT-23 package.
Product Attributes
- Complementary to BC860
- Case Material: Molded Plastic
- UL flammability Classification Rating: 94V-0
- Weight: 0.008 grams (approximate)
- Marking: 2F (BC850B), 2G (BC850C)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 50 | V | |
| Collector-Emitter Voltage | VCEO | 45 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 100 | mA | |
| Collector Power Dissipation | PD | 300 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 417 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC=10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC=10mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10uAIC=0 |
| Collector cut-off current | ICBO | 15 | nA | VCB=30V, IE=0 |
| DC current gain | hFE1 | 200-800 | VCE=5V, IC=2mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.09 - 0.25 | V | IC=10mAIB=0.5mA |
| Collector-emitter saturation voltage | VCE(sat) | 0.2 - 0.6 | V | IC=100mAIB=5mA |
| Base-emitter saturation voltage | VBE(sat) | 0.7 | V | IC=10mAIB=0.5mA |
| Base-emitter saturation voltage | VBE(sat) | 0.9 | V | IC=100mAIB=5mA |
| Base-emitter voltage | VBE(ON) | 0.58 - 0.7 | V | VCE=5V,IC=2mA |
| Base-emitter voltage | VBE(ON) | 0.77 | V | VCE=5V,IC=10mA |
| Transition frequency | fT | 300 | MHz | VCE=5V,IC=10mA,f=100MHz |
| Collector output capacitance | Cob | 2.5 - 4.5 | pF | VCE=10V, IE=0, f=1MHz |
| Noise Figure | NF | 1.0 | dB | IC=0.2mA,VCE=5.0V Rg=10k,f=1.0kHz |
| hFE Rank | BC850B | Range 110-220 | ||
| hFE Rank | BC850C | Range 420-800 |
2507111630_Guangdong-Hottech-BC850B_C49238160.pdf
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