PNP transistor Guangdong Hottech MMBT2907A suitable for amplifier applications in SOT23 surface mount
Key Attributes
Model Number:
MMBT2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description
MMBT2907 PNP Bipolar Transistor
The MMBT2907 is a general-purpose PNP bipolar transistor designed for amplifier applications. It is complementary to the MMBT2222 and comes in a surface-mount SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Complementary to: MMBT2222
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -60 | V | |
| Collector-Emitter Voltage | VCEO | -60 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -600 | mA | |
| Collector Power Dissipation | PC | 250 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 500 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-10 uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | V | IC=-10mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10uAIC=0 |
| Collector cut-off current | ICBO | -20 | nA | VCB=-50V, IE=0 |
| Collector cut-off current | ICEX | -50 | nA | VCE=-30V, VBE(OFF)=-0.5V |
| Emitter cut-off current | IEBO | -10 | nA | VEB=-3V, IC=0 |
| DC current gain | hFE1 | 100 | VCE=-10V, IC=-150mA | |
| DC current gain | hFE1 | 300 | VCE=-10V, IC=-150mA | |
| DC current gain | hFE2 | 52 | VCE=-10V, IC=-0.1mA | |
| DC current gain | hFE3 | 32 | VCE=-10V, IC=-500mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.67 | V | IC=-500mAIB=-50mA |
| Collector-emitter saturation voltage | VCE(sat) | -0.4 | V | IC=-150mAIB=-15mA |
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-500mAIB=-50mA |
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-150mAIB=-15mA |
| Transition frequency | fT | 200 | MHz | VCE=-20V,IC=-50mA,f=100MHz |
| Delay time | td | 10 | ns | VCE=-30V, IC=-150mAIB1=-15mA |
| Rise time | tr | 25 | ns | |
| Storage time | tS | 225 | ns | VCE=-6V,IC=-150mA IB1=IB2=-15mA |
| Fall time | tf | 60 | ns |
2410122030_Guangdong-Hottech-MMBT2907A_C181122.pdf
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