High Conductance Plastic Encapsulated Switching Diode Guangdong Hottech BAS16 for Circuit Protection
Key Attributes
Model Number:
BAS16
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1V@50mA
Current - Rectified:
150mA
Mfr. Part #:
BAS16
Package:
SOT-23
Product Description
Product Overview
The BAS16 is a plastic-encapsulated switching diode designed for general-purpose switching applications. It offers fast switching speed and high conductance.
Product Attributes
- Marking: A6
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Material: Plastic-Encapsulate
- Origin: China (implied by brand)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions |
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |
| Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage | VRRM / VRWM | 75 | V | |
| DC Blocking Voltage | VR | 75 | V | |
| RMS Reverse Voltage | VR(RMS) | 53 | V | |
| Forward Continuous Current | IFM | 300 | mA | |
| Average Rectified Output Current | IO | 150 | mA | |
| Peak Forward Surge Current (@t=1.0s) | IFSM | 2.0 | A | |
| Peak Forward Surge Current (@t =1.0s) | IFSM | 1.0 | A | |
| Power Dissipation | PD | 225 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 556 | /W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | TSTG | -55~+150 | ||
| Reverse breakdown voltage | V(BR) | 75 | V | IR= 100A |
| Reverse voltage leakage current | IR | 1 | A | VR=75V |
| Forward voltage | VF | 0.715 | V | IF=1mA |
| Forward voltage | VF | 0.855 | V | IF=10mA |
| Forward voltage | VF | 1 | V | IF=50mA |
| Diode capacitance | CD | 2 | pF | VR=0, f=1MHz |
| Reveres recovery time | trr | 6 | ns | IF=IR=10mA,Irr=0.1IR, RL=100 |
2410122025_Guangdong-Hottech-BAS16_C181107.pdf
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