High voltage MOSFET GOODWORK 600R65 with 0.51 ohm typical on resistance and 142mJ avalanche energy rating
Key Attributes
Model Number:
600R65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7.3A
Operating Temperature -:
-
RDS(on):
600mΩ@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28.6pF
Number:
1 N-channel
Output Capacitance(Coss):
640pF
Pd - Power Dissipation:
25W
Input Capacitance(Ciss):
545pF
Gate Charge(Qg):
13.8nC@10V
Mfr. Part #:
600R65
Package:
TO-252
Product Description
Product Overview
The 600R65 is a high-performance N-channel MOSFET designed for demanding power applications. It features a 650V breakdown voltage and a continuous drain current of 7.3A, with a low on-resistance of 0.51 (Typ.) at VGS = 10V, ID = 3.5A. This device offers fast switching speeds, improved dv/dt capability, and is 100% avalanche tested, making it ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | |
| Drain Source voltage | VDSS | 650 | V | ||
| Gate Source voltage | VGSS | ±30 | V | ||
| Continuous drain current | ID | 7.3 | A | TC=25oC | |
| Continuous drain current | ID | 4.6 | A | TC=100oC | |
| Pulsed drain current | IDM | 21.9 | A | (1) | |
| Power dissipation | PD | 25 | W | ||
| Single - pulse avalanche energy | EAS | 142 | mJ | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | ||
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | (2) | |
| Storage temperature | Tstg | -55 ~150 | |||
| Maximum operating junction temperature | Tj | 150 | |||
| Drain Source Breakdown voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 250uA | |
| Gate Threshold Voltage | VGS(th) | 2 - 4 | V | VDS = VGS, ID = 250uA | |
| Zero Gate Voltage Drain Current | IDSS | - | 1 | uA | VDS = 650V, VGS = 0V |
| Gate Leakage Current | IGSS | - | 100 | nA | VGS = ±30V, VDS = 0V |
| Drain-Source On State Resistance | RDS(ON) | 0.51 - 0.60 | Ω | VGS = 10V, ID = 3.5A | |
| Input Capacitance | Ciss | - | 545 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | - | 640 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | - | 28.6 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Effective Output Capacitance Energy Related | Co(er) | - | 18.8 | - | VDS = 0V to 520V, VGS = 0V, f = 1.0MHz |
| Turn On Delay Time | td(on) | - | 18 | ns | VGS = 10V, RG = 25Ω, VDS = 325V, ID = 7.3A |
| Rise Time | tr | - | 33 | ns | VGS = 10V, RG = 25Ω, VDS = 325V, ID = 7.3A |
| Turn Off Delay Time | td(off) | - | 80 | ns | VGS = 10V, RG = 25Ω, VDS = 325V, ID = 7.3A |
| Fall Time | tf | - | 28 | ns | VGS = 10V, RG = 25Ω, VDS = 325V, ID = 7.3A |
| Total Gate Charge | Qg | - | 13.8 | nC | VGS = 10V, VDS = 520V, ID = 7.3A |
| Gate Source Charge | Qgs | - | 3.6 | nC | VGS = 10V, VDS = 520V, ID = 7.3A |
| Gate Drain Charge | Qg | - | 5.6 | nC | VGS = 10V, VDS = 520V, ID = 7.3A |
| Gate Resistance | RG | - | 20 | Ω | VGS = 0V, f = 1.0MHz |
| Continuous Diode Forward Current | ISD | - | 7.3 | A | |
| Diode Forward Voltage | VSD | - | 1.4 | V | ISD = 7.3A, VGS = 0V |
| Reverse Recovery Time | trr | - | 272 | ns | ISD = 7.3A di/dt = 100A/μs, VDD = 100V |
| Reverse Recovery Charge | Qrr | - | 3 | μC | ISD = 7.3A di/dt = 100A/μs, VDD = 100V |
| Reverse Recovery Current | Irrm | - | 22.2 | A | ISD = 7.3A di/dt = 100A/μs, VDD = 100V |
2410121452_GOODWORK-600R65_C17702912.pdf
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