Switching Diode Guangdong Hottech BAS21 Plastic Encapsulated with Fast Switching Speed and High Conductance
Key Attributes
Model Number:
BAS21
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21
Package:
SOT-23
Product Description
Product Overview
The BAS21/A/C/S is a plastic-encapsulated switching diode designed for general-purpose switching applications. It features a fast switching speed and a surface mount package ideally suited for automatic insertion. The diode offers high conductance.
Product Attributes
- Brand: HOTTECH
- Material: Plastic-Encapsulate
- Package: SOT-23
- Marking: BAS21: JS, BAS21A: JS2, BAS21C:JS3, BAS21S: JS4
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| Maximum Ratings | VRRM | 250 | V | |
| VRWM | 250 | V | ||
| VR | 250 | V | ||
| IFM | 400 | mA | ||
| IO | 200 | mA | ||
| Surge Current | IFSM (@ t = 1.0s) | 2.5 | A | |
| IFSM (@ t = 1.0s) | 0.5 | A | ||
| IFRM | 625 | mA | ||
| Power Dissipation | PD | 225 | mW | |
| Thermal Resistance | RJA | 55 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | TSTG | -55~+150 | ||
| Electrical Ratings | V(BR) | IR= 100A | 250 | V |
| IR | VR=200V | 0.1 | A | |
| VF (@ IF=100mA) | 1000 | mV | ||
| VF (@ IF=200mA) | 1250 | mV | ||
| Diode Capacitance | CD | VR=0V, f=1MHz | 5 | pF |
| Reveres Recovery Time | trr | IF=IR=30mA,Irr=0.1IR,RL=100 | 50 | ns |
2410122015_Guangdong-Hottech-BAS21_C181108.pdf
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