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quality Fast Switching MOSFET with Low On Resistance and 650V Drain Source Voltage including GOODWORK 20N65F factory
quality Fast Switching MOSFET with Low On Resistance and 650V Drain Source Voltage including GOODWORK 20N65F factory

Fast Switching MOSFET with Low On Resistance and 650V Drain Source Voltage including GOODWORK 20N65F

Key Attributes
Model Number: 20N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
350mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
40pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.978nF@25V
Pd - Power Dissipation:
167W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
20N65F
Package:
ITO-220F
Product Description

20N65 N-Channel Enhancement Mode MOSFET

The 20N65 is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding power applications. It features a 650V drain-source voltage, a continuous drain current of 20A, and a low on-resistance of 0.35 (Typ.) at VGS = 10V, ID = 10A. This MOSFET offers fast switching speeds and improved dv/dt capability, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits. It has undergone 100% avalanche testing for enhanced reliability.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Units 20N65F
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage (VDSS) V 650
Gate-Source Voltage (VGSS) V ±30
Continuous Drain Current (ID) TC = 25 A 20
Continuous Drain Current (ID) TC = 100 A 13
Pulsed Drain Current (IDM) note1 A 80
Single Pulsed Avalanche Energy (EAS) note2 mJ 1350
Power Dissipation (PD) TC = 25 W 167
Thermal Resistance, Junction to Case (RJC) /W 0.75
Thermal Resistance, Junction to Ambient (RJA) /W 60
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150
Electrical Characteristics (TC=25 unless otherwise specified)
Drain-Source Breakdown Voltage (V(BR)DSS) VGS=0V,ID=250A V 650
Zero Gate Voltage Drain Current (IDSS) VDS = 650V, VGS = 0V, TJ= 25 μA 1
Gate to Body Leakage Current (IGSS) VDS =0V, VGS = ±30V nA ±100
Gate Threshold Voltage (VGS(th)) VDS= VGS, ID=250μA V 2 - 4
Static Drain-Source on-Resistance (RDS(on)) note3 VGS =10V, ID =10A Ω - 0.35 - 0.45
Input Capacitance (Ciss) VDS = 25V, VGS = 0V, f = 1.0MHz pF 2978
Output Capacitance (Coss) pF 192
Reverse Transfer Capacitance (Crss) pF 40
Total Gate Charge (Qg) VDD = 520V, ID = 20A, VGS = 10V nC 80
Gate to Source Charge (Qgs) nC 12
Gate to Drain Charge (Qgd) nC 34
Turn-on Delay Time (td(on)) VDD = 325V, ID =20A, RG = 25Ω ns 37
Turn-on Rise Time (tr) ns 66
Turn-off Delay Time (td(off)) ns 71
Turn-off Fall Time (tf) ns 48
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward Current (IS) A 20
Maximum Pulsed Drain to Source Diode Forward Current (ISM) A 80
Drain to Source Diode Forward Voltage (VSD) VGS = 0V, ISD = 20A V 1.4
Reverse Recovery Time (trr) VGS =0V, IS=20A, di/dt=100A/μs ns 450
Reverse Recovery Charge (Qrr) μC 1.7

2408021728_GOODWORK-20N65F_C5807888.pdf

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