Synchronous buck converter MOSFET GOODWORK 80N06 with high cell density trench design and low RDSon
Key Attributes
Model Number:
80N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
257pF@30V
Number:
1 N-channel
Output Capacitance(Coss):
286pF
Pd - Power Dissipation:
108W
Input Capacitance(Ciss):
4.136nF@30V
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
80N06
Package:
TO-252
Product Description
Product Overview
The 80N06 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Product Summary | ||||||
| BVDSS | Drain-Source Breakdown Voltage | 60 | V | |||
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=30A | 6 | 8 | m | |
| ID | Continuous Drain Current | TC = 25 | 80 | A | ||
| ID | Continuous Drain Current | TC = 100 | 52 | A | ||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 60 | V | |||
| VGSS | Gate-Source Voltage | 25 | V | |||
| ID | Continuous Drain Current | TC = 25 | 80 | A | ||
| ID | Continuous Drain Current | TC = 100 | 52 | A | ||
| IDM | Pulsed Drain Current | note1 | 320 | A | ||
| EAS | Single Pulsed Avalanche Energy | note2 | 169 | mJ | ||
| PD | Power Dissipation | TC = 25 | 108 | W | ||
| RJC | Thermal Resistance, Junction to Case | 1.4 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2 | 3 | 4 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=30A, note3 | - | 6 | 8 | m |
| Ciss | Input Capacitance | VDS=30V, VGS=0V, f=1.0MHz | - | 4136 | - | pF |
| Coss | Output Capacitance | - | 286 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 257 | - | pF | |
| Qg | Total Gate Charge | VDS=30V, ID=30A, VGS=10V | - | 90 | - | nC |
| Qgs | Gate-Source Charge | - | 9 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 18 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=30V, ID=30A, RG=1.8, VGS=10V | - | 9 | - | ns |
| tr | Turn-on Rise Time | - | 7 | - | ns | |
| td(off) | Turn-off Delay Time | - | 40 | - | ns | |
| tf | Turn-off Fall Time | - | 15 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 80 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 320 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=30A, dI/dt=100A/s | - | 33 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 46 | - | nC | |
2410241137_GOODWORK-80N06_C42186020.pdf
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