Power Management N Channel MOSFET with 3.5 Milliohm On Resistance and 80A Drain Current GOODWORK 80N02
Key Attributes
Model Number:
80N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
80A
RDS(on):
3.5mΩ@4.5V,30A
Operating Temperature -:
-55℃~+125℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
386pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
2.5nF@10V
Pd - Power Dissipation:
58W
Gate Charge(Qg):
32nC@4.5V
Mfr. Part #:
80N02
Package:
TO-252
Product Description
Product Overview
The 80N02 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. It features 20V breakdown voltage, low on-resistance (3.5 m typ.), and high continuous drain current capability (80A). This device utilizes advanced high cell density Trench technology, offering excellent CdV/dt effect decline and 100% EAS guaranteed performance. It is ideal for power management solutions requiring fast switching and high efficiency.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Rating | Units | Test Condition | ||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 80 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 35 | A | |||
| IDM | Pulsed Drain Current | 200 | A | |||
| EAS | Single Pulse Avalanche Energy | 58 | mJ | |||
| IAS | Avalanche Current | 41 | A | |||
| PD@TC=25 | Total Power Dissipation | 58 | W | |||
| TSTG | Storage Temperature Range | -55 to 150 | ||||
| TJ | Operating Junction Temperature Range | -55 to 125 | ||||
| Thermal Data | ||||||
| RJC | Thermal Resistance Junction-Case | 2.6 | /W | Typ. | ||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Min. | Typ. | Max. | Units | Test Condition | ||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 20 | - | - | V | GS=0V, ID =250A |
| IDSS | Zero Gate Voltage Drain Current | - | - | 1.0 | μA | DS=20V, VGS =0V |
| IGSS | Gate to Body Leakage Current | - | - | ±100 | nA | DS=0V, VGS =±12V |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | 0.7 | 1.1 | - | V | VDS=VGS, ID =250μA |
| RDS(on) | Static Drain-Source on-Resistance | - | 3.5 | 5 | mΩ | VGS=4.5V, ID=30A |
| RDS(on) | Static Drain-Source on-Resistance | - | 6.5 | 9 | mΩ | VGS=2.5V, ID=20A |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | - | 2500 | - | pF | VDS=10V, VGS=0V, f = 1.0MHz |
| Coss | Output Capacitance | - | 407 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 386 | - | pF | |
| Qg | Total Gate Charge | - | 32 | - | nC | VDS=10V, ID=30A, VGS=4.5V |
| Qgs | Gate-Source Charge | - | 3 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 11 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | - | 17 | - | ns | VDS=10V, ID=30A, RGEN=3Ω, VGS =4.5V |
| tr | Turn-on Rise Time | - | 49 | - | ns | |
| td(off) | Turn-off Delay Time | - | 74 | - | ns | |
| tf | Turn-off Fall Time | - | 26 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | 80 | - | - | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | 300 | - | - | A | |
| VSD | Drain to Source Diode Forward Voltage | - | 1.2 | - | V | VGS = 0V, IS =30A |
2504251720_GOODWORK-80N02_C48580720.pdf
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