Dual P Channel Power MOSFET 30V 5.5A Drain Current GOODWORK 4953 GK for Fast Switching Applications
Key Attributes
Model Number:
4953-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.5A
RDS(on):
45mΩ@10V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF@15V
Number:
2 P-Channel
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
560pF@15V
Gate Charge(Qg):
5.1nC@4.5V
Mfr. Part #:
4953-GK
Package:
SOP-8
Product Description
Product Overview
These Dual P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Features
- 30V, -5.5A, RDS(ON) = 45m@VGS = -10V
- Fast switching
- Green Device Available
- Suitable for -4.5V Gate Drive Applications
Applications
- Notebook Load Switch
- Battery Protection
- Hand-held Instruments
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current Continuous | (TC=25) | -5.5 | A | ||
| (TC=100) | -3.48 | A | ||||
| IDM | Drain Current Pulsed1 | -22 | A | |||
| PD | Power Dissipation | (TC=25) | 2.1 | W | ||
| Derate above 25 | 0.017 | W/ | ||||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction to ambient | 60 | /W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.03 | V/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-24V , VGS=0V , TJ=125 | -10 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-3A | 45 | 55 | mΩ | |
| VGS=-4.5V , ID=-2A | 65 | 80 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 4 | mV/ | |||
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 3.5 | S | ||
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge2,3 | VDS=-15V , VGS=-4.5V , ID=-3A | 5.1 | nC | ||
| Qgs | Gate-Source Charge2,3 | 2 | ||||
| Qgd | Gate-Drain Charge2,3 | 2.2 | ||||
| Td(on) | Turn-On Delay Time2,3 | VDD=-15V , VGS=-10V , RG=6Ω , ID=-1A | 3.4 | ns | ||
| Tr | Rise Time2,3 | 10.8 | ns | |||
| Td(off) | Turn-Off Delay Time2,3 | 26.9 | ns | |||
| Tf | Fall Time2,3 | 6.9 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , F=1MHz | 560 | pF | ||
| Coss | Output Capacitance | 55 | ||||
| Crss | Reverse Transfer Capacitance | 40 | ||||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -5.5 | A | ||
| ISM | Pulsed Source Current | -11 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
2504101957_GOODWORK-4953-GK_C42457471.pdf
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