voltage controlled switch GOODWORK 2N7002KDW featuring low RDSon and rugged design for load switching

Key Attributes
Model Number: 2N7002KDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
900mΩ@10V,500mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.3V@1mA
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
2 N-Channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF@10V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
30nC@25V
Mfr. Part #:
2N7002KDW
Package:
SOT-363
Product Description

Product Overview

The 2N7002KDW is a voltage-controlled small signal switch featuring a high-density cell design for low RDS(on). It is rugged, reliable, and offers high saturation current capability with ESD protection. This MOSFET is ideal for load switching in portable devices and DC/DC converters.

Product Attributes

  • Package: SOT-363
  • Type: Plastic-Encapsulate MOSFETS
  • Marking: 72K

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-Source Breakdown VoltageVDSVGS = 0V, ID =250A60V
Gate Threshold VoltageVGS(th)VDS =VGS, ID =1mA11.32.5V
Zero Gate Voltage Drain CurrentIDSSVDS =48V,VGS = 0V1A
Gate Source leakage currentIGSS1VGS =20V, VDS = 0V10A
Drain-Source On-ResistanceRDS(on)VGS =4.5V, ID =200mA1.15.3
VGS =10V,ID =500mA0.95
Diode Forward VoltageVSDVGS=0V, IS=300mA1.5V
Recovered chargeQrVGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s30nC
Input CapacitanceCissVDS =10V,VGS =0V,f =1MHz40pF
Output CapacitanceCoss30pF
Reverse Transfer CapacitanceCrss10pF
Turn-On Delay Timetd(on)VGS=10V,VDD=50V,RG=50, RGS=50, RL=25010ns
Turn-Off Delay Timetd(off)15ns
Reverse recovery TimetrrVGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s30ns
Gate-Source Breakdown VoltageBVGSOIgs=1mA (Open Drain)21.530V

2408021727_GOODWORK-2N7002KDW_C22470948.pdf

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