Rugged N Channel MOSFET GOODWORK AO3402 with High Saturation Current and Low Gate Threshold Voltage
Key Attributes
Model Number:
AO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
54.5pF
Input Capacitance(Ciss):
390pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
4.34nC@4.5V
Mfr. Part #:
AO3402
Package:
SOT-23
Product Description
Product Overview
The AO3402 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), making it rugged and reliable with high saturation current capability.
Product Attributes
- Marking Type number: AO3402
- Marking code: A29T
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| STATIC CHARACTERISTICS | Drain-source breakdown voltage | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | VDS =24V,VGS = 0V | 1 | A | |||
| Gate-body leakage current | VGS =12V, VDS = 0V | 100 | nA | |||
| Gate threshold voltage | VDS =VGS, ID =250A | 0.6 | 1.4 | V | ||
| Drain-source on-resistance | VGS =10V, ID =4A | 36 | ||||
| VGS =4.5V, ID =3A | 70 | m | ||||
| DYNAMIC CHARACTERISTICS | Input capacitance | VDS =15V,VGS =0V,f =1MHz | 390 | pF | ||
| Output capacitance | VDS =15V,VGS =0V,f =1MHz | 55 | pF | |||
| SWITCHING CHARACTERISTICS | Turn-on delay time | VGS=10V,VDS=15V, RL=3.75,RGEN=6 | 3.3 | ns | ||
| Turn-on rise time | VGS=10V,VDS=15V, RL=3.75,RGEN=6 | 1 | ns | |||
| Body Diode Characteristics | Diode forward voltage | IS=1A, VGS = 0V | 1 | V | ||
| Body diode reverse recovery charge | IF=4A,dI/dt=100A/s | 6.3 | nC |
2410121536_GOODWORK-AO3402_C2938369.pdf
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