Low RDS ON N Channel Transistor GOODWORK BSS138 Ideal for High Density Cell Circuit Switching
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.7Ω@10V;6Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
27pF
Gate Charge(Qg):
-
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON). It functions as a voltage-controlled small signal switch and is known for its ruggedness, reliability, and high saturation current capability. This transistor is suitable for various applications requiring efficient switching and low power dissipation.
Product Attributes
- Marking Type: BSS138
- Marking Code: SS
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 50 | V | |||
| Continuous Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | 0.22 | A | |||
| Power Dissipation | PD | (Ta=25℃ unless otherwise noted) | 0.35 | W | ||
| Thermal Resistance Junction to Ambient | RΘJA | 357 | ℃/W | |||
| Operating Temperature | Tj | -55 | 150 | ℃ | ||
| Storage Temperature | Tstg | -55 | +150 | ℃ | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 50 | V | ||
| Gate-body leakage | IGSS | VDS =0V, VGS =±20V | ±10 | µA | ||
| Zero gate voltage drain current | IDSS | VDS =50V, VGS =0V | 0.5 | µA | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =1mA | 0.80 | 1.50 | V | |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =0.22A | 3.50 | Ω | ||
| Static drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.22A | 6 | Ω | ||
| Forward transconductance | gFS | VDS =10V, ID =0.22A | 0.12 | S | ||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f=1MHz | 27 | pF | ||
| Output capacitance | Coss | VDS =25V,VGS =0V, f=1MHz | 13 | pF | ||
| Reverse transfer capacitance | Crss | VDS =25V,VGS =0V, f=1MHz | 6 | pF | ||
| Turn-on delay time | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 5 | ns | ||
| Rise time | tr | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 18 | ns | ||
| Turn-off delay time | td(off) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 36 | ns | ||
| Fall time | tf | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 14 | ns | ||
| Body diode forward voltage | VSD | IS=0.44A, VGS = 0V | 1.4 | V |
2504101957_GOODWORK-BSS138_C2938375.pdf
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