switching transistor GOODWORK AO3407A P channel MOSFET with advanced trench technology and low on state resistance
Product Overview
The AO3407A is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements and offers features like Green Device availability, super low gate charge, and excellent CdV/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: AO
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS= 0V, ID= -250A | -30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS= -30V, VGS= 0V | - | - | -1 | A |
| Gate-Source Leakage | IGSS | VDS= 0V, VGS= 20V | - | - | 100 | nA |
| Gate-Source Threshold voltage | VGS(th) | VDS= VGS, ID= -250A | -1 | -1.5 | -2.5 | V |
| Drain-Source on-State Resistance | RDS(on) | VGS= -10V, ID= -4.1A | - | 41 | 60 | m |
| Drain-Source on-State Resistance | RDS(on) | VGS= -4.5V, ID= -3A | - | 53 | 85 | m |
| Input Capacitance | Ciss | VGS = 0V , VDS = -15V, f = 1.0MHz | - | 530 | - | pF |
| Output Capacitance | Coss | VGS = 0V , VDS = -15V, f = 1.0MHz | - | 70 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V , VDS = -15V, f = 1.0MHz | - | 56 | - | pF |
| Total Gate Charge | Qg | VGS = -10V, VDS = -15V, ID = -4.1A | - | 6.8 | - | nC |
| GateSource Charge | Qgs | VGS = -10V, VDS = -15V, ID = -4.1A | - | 1.0 | - | nC |
| GateDrain Charge | Qg d | VGS = -10V, VDS = -15V, ID = -4.1A | - | 1.4 | - | nC |
| Turn-on Delay Time | td(on) | VGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5 | - | 14 | - | ns |
| Rise Time | tr | VGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5 | - | 61 | - | ns |
| Turn-off Delay time | td(off) | VGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5 | - | 19 | - | ns |
| Fall Time | tf | VGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5 | - | 10 | - | ns |
| Diode Forward Voltage | VSD | IS = -4.1A, VGS = 0V | - | - | -1.2 | V |
| Continuous Source Current | IS | - | - | - | -4.5 | A |
| Drain-Source Voltage | VDS | - | -30 | - | - | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Continuous Drain Current | ID@TA=25 | - | - | -4.2 | - | A |
| Continuous Drain Current | ID@TA=70 | - | - | -3.6 | - | A |
| Pulsed Drain Current | IDM | - | - | -16 | - | A |
| Total Power Dissipation | PD@TA=25 | - | - | 1.5 | - | W |
| Total Power Dissipation | PD@TA=70 | - | - | 1.0 | - | W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Thermal Resistance Junction-Ambient | RJA | - | - | - | 105 | /W |
2508261540_GOODWORK-AO3407A_C50581527.pdf
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