switching transistor GOODWORK AO3407A P channel MOSFET with advanced trench technology and low on state resistance

Key Attributes
Model Number: AO3407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
41mΩ@10V,4.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
56pF@15V
Input Capacitance(Ciss):
530pF@15V
Pd - Power Dissipation:
1.5W
Output Capacitance(Coss):
70pF
Gate Charge(Qg):
6.8nC@15V
Mfr. Part #:
AO3407A
Package:
SOT-23-3L
Product Description

Product Overview

The AO3407A is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements and offers features like Green Device availability, super low gate charge, and excellent CdV/dt effect decline due to its advanced high cell density trench technology.

Product Attributes

  • Brand: AO
  • Certifications: RoHS, Green Product

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageV(BR)DSSVGS= 0V, ID= -250A-30--V
Zero Gate Voltage Drain CurrentIDSSVDS= -30V, VGS= 0V---1A
Gate-Source LeakageIGSSVDS= 0V, VGS= 20V--100nA
Gate-Source Threshold voltageVGS(th)VDS= VGS, ID= -250A-1-1.5-2.5V
Drain-Source on-State ResistanceRDS(on)VGS= -10V, ID= -4.1A-4160m
Drain-Source on-State ResistanceRDS(on)VGS= -4.5V, ID= -3A-5385m
Input CapacitanceCissVGS = 0V , VDS = -15V, f = 1.0MHz-530-pF
Output CapacitanceCossVGS = 0V , VDS = -15V, f = 1.0MHz-70-pF
Reverse Transfer CapacitanceCrssVGS = 0V , VDS = -15V, f = 1.0MHz-56-pF
Total Gate ChargeQgVGS = -10V, VDS = -15V, ID = -4.1A-6.8-nC
GateSource ChargeQgsVGS = -10V, VDS = -15V, ID = -4.1A-1.0-nC
GateDrain ChargeQg dVGS = -10V, VDS = -15V, ID = -4.1A-1.4-nC
Turn-on Delay Timetd(on)VGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5-14-ns
Rise TimetrVGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5-61-ns
Turn-off Delay timetd(off)VGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5-19-ns
Fall TimetfVGS= -10V, VDS= -15V , RL= 15,RGEN= 2.5-10-ns
Diode Forward VoltageVSDIS = -4.1A, VGS = 0V---1.2V
Continuous Source CurrentIS----4.5A
Drain-Source VoltageVDS--30--V
Gate-Source VoltageVGS---20V
Continuous Drain CurrentID@TA=25---4.2-A
Continuous Drain CurrentID@TA=70---3.6-A
Pulsed Drain CurrentIDM---16-A
Total Power DissipationPD@TA=25--1.5-W
Total Power DissipationPD@TA=70--1.0-W
Storage Temperature RangeTSTG--55-150
Operating Junction Temperature RangeTJ--55-150
Thermal Resistance Junction-AmbientRJA---105/W

2508261540_GOODWORK-AO3407A_C50581527.pdf

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