Trench DMOS technology N Channel transistor GOODWORK SI2304DDS for robust power switching performance
Key Attributes
Model Number:
SI2304DDS
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
3.5A
RDS(on):
40mΩ@10V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 N-channel
Output Capacitance(Coss):
40pF
Input Capacitance(Ciss):
245pF
Pd - Power Dissipation:
278mW
Gate Charge(Qg):
3.1nC
Mfr. Part #:
SI2304DDS
Package:
SOT-23
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is specifically designed to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are ideal for high efficiency, fast switching applications.
Product Attributes
- Brand: DEMACHEL
- Device Type: SI2304DDS
- Technology: Trench DMOS
- Mode: N-Channel enhancement mode
- Certifications: Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| BVDSS | Drain-Source Breakdown Voltage | 30 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID | Drain Current – Continuous (TA=25) | 3.5 | A | ||
| ID | Drain Current – Continuous (TA=70) | 1.68 | A | ||
| IDM | Drain Current – Pulsed1 | 12 | A | ||
| PD | Power Dissipation (TA=25) | 278 | mW | ||
| PD | Power Dissipation – Derate above 25 | 2.22 | mW/ | ||
| TSTG | Storage Temperature Range | -50 | 150 | ||
| TJ | Operating Junction Temperature Range | -50 | 150 | ||
| Thermal Characteristics | |||||
| RJA | Thermal Resistance Junction to ambient | 450 | /W | ||
| Off Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage | 30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | 0.018 | V/ | ||
| IDSS | Drain-Source Leakage Current | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | ±100 | nA | ||
| On Characteristics | |||||
| RDS(ON) | Static Drain-Source On-Resistance | 30 | 40 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | 45 | 66 | mΩ | |
| VGS(th) | Gate Threshold Voltage | 1 | 1.5 | 2.5 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | -3.2 | mV/ | ||
| gfs | Forward Transconductance | 2.3 | S | ||
| Dynamic and switching Characteristics | |||||
| Qg | Total Gate Charge2,3 | 3.1 | nC | ||
| Qgs | Gate-Source Charge2,3 | 0.1 | |||
| Qgd | Gate-Drain Charge2,3 | 1.7 | |||
| Td(on) | Turn-On Delay Time2,3 | 2.2 | ns | ||
| Tr | Rise Time2,3 | 6.9 | ns | ||
| Td(off) | Turn-Off Delay Time2,3 | 15.2 | ns | ||
| Tf | Fall Time2,3 | 4.5 | ns | ||
| Ciss | Input Capacitance | 245 | pF | ||
| Coss | Output Capacitance | 40 | pF | ||
| Crss | Reverse Transfer Capacitance | 78 | pF | ||
| Rg | Gate resistance | 0.9 | Ω | ||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||
| IS | Continuous Source Current | 3.5 | A | ||
| ISM | Pulsed Source Current | 7.0 | A | ||
| VSD | Diode Forward Voltage | 1.3 | V | ||
2411081754_GOODWORK-SI2304DDS_C42186048.pdf
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