Rugged N Channel Enhancement Mode Field Effect Transistor GOODWORK SI2310 for Switching Applications
Key Attributes
Model Number:
SI2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
125mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19.5pF
Number:
1 N-channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
247pF
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
SI2310
Package:
SOT-23
Product Description
Product Overview
The SI2310 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), rugged and reliable construction, and high saturation current capability. This transistor is suitable for applications requiring efficient power management and signal control.
Product Attributes
- Brand: DEMACHEL
- Type: SOT-23
- Marking Code: S10
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 3 | A | |||
| Pulsed Drain Current (note 1) | IDM | 10 | A | |||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance from Junction to Ambient (note 2) | RθJA | 357 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =250µA | 0.5 | 2 | V | |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =10V, ID =3A | 105 | mΩ | ||
| VGS =4.5V, ID =3A | 125 | mΩ | ||||
| Forward tranconductance (note 3) | gFS | VDS =15V, ID =2A | 1.4 | S | ||
| Diode forward voltage (note 3) | VSD | IS=3A, VGS = 0V | 1.2 | V | ||
| Input Capacitance | Ciss | VDS =30V,VGS =0V,f =1MHz | 247 | pF | ||
| Output Capacitance | Coss | VDS =30V,VGS =0V,f =1MHz | 34 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =30V,VGS =0V,f =1MHz | 19.5 | pF | ||
| Turn-on delay time | td(on) | VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω | 6 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω | 15 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω | 15 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω | 10 | ns | ||
| Total Gate Charge | Qg | VDS =30V,VGS =4.5V,ID =3A | 6 | nC | ||
| Gate-Source Charge | Qgs | VDS =30V,VGS =4.5V,ID =3A | 1 | nC | ||
| Gate-Drain Charge | Qg d | VDS =30V,VGS =4.5V,ID =3A | 1.3 | nC |
2410121547_GOODWORK-SI2310_C2938374.pdf
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