High density cell design transistor SI2302 with low RDS ON and high saturation current capability
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.3A
RDS(on):
50mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
The SI2302 is a voltage-controlled small signal switch featuring a high-density cell design for low RDS(ON). It is rugged, reliable, and offers high saturation current capability, making it suitable for high-density applications. This N-Channel Enhancement Mode Field Effect Transistor is designed for efficient switching.
Product Attributes
- Marking Type number: SI2302
- Marking code: A2SHB
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID =10A | 20 | V | ||
| VGS(th) | VDS =VGS, ID =250uA | 0.7 | 1.1 | V | ||
| IGSS | VDS =0V, VGS =8V | 100 | nA | |||
| IDSS | VDS =20V, VGS =0V | 1 | A | |||
| rDS(on) | VGS =4.5V, ID =4.0A | 25 | 40 | |||
| VGS =2.5V, ID =3.0A | 35 | 50 | ||||
| gfs | VDS =5V, ID =3.6A | 8 | S | |||
| VSD | IS=0.94A,VGS=0V | 0.76 | 1.2 | V | ||
| Qg | VDS =10V,VGS =4.5V,ID =3.6A | 4.0 | 10 | nC | ||
| Dynamic | Qgs | VDS =10V,VGS =4.5V,ID =3.6A | 0.65 | nC | ||
| Qgd | VDS =10V,VGS =4.5V,ID =3.6A | 1.5 | nC | |||
| Ciss | VDS =10V,VGS =0V,f=1MHz | 300 | pF | |||
| Switching | Coss | VDS =10V,VGS =0V,f=1MHz | 120 | pF | ||
| Crss | VDS =10V,VGS =0V,f=1MHz | 80 | pF | |||
| td(on) | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 7 | 15 | ns | ||
| Switching | tr | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 55 | 80 | ns | |
| td(off) | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 16 | 60 | ns | ||
| tf | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 10 | 25 | ns | ||
| Maximum Ratings | VDS | 20 | V | |||
| VGS | 12 | V | ||||
| ID | 4.3 | A | ||||
| IS | 0.6 | A | ||||
| PD | 1.2 | W | ||||
| RJA | (t5s) | 357 | /W | |||
| TJ | 150 | |||||
| Storage | TSTG | -55 | ~+150 |
2410121523_GOODWORK-SI2302_C2938373.pdf
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