Synchronous buck converter Pch MOSFET GOODWORK AOD409-GK offering low gate charge and RoHS compliant design
Key Attributes
Model Number:
AOD409-GK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
RDS(on):
27mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
52.1W
Input Capacitance(Ciss):
3.635nF@15V
Output Capacitance(Coss):
224pF
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
AOD409-GK
Package:
TO-252
Product Description
Product Overview
The AOD409 is a high cell density trenched P-ch MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Rating | Units | Conditions | Min. | Typ. | Max. |
| Drain-Source Voltage | VDS | -60 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current, TC=25 | ID@TC=25 | -45 | A | -VGS @ -10V1 | |||
| Continuous Drain Current, TC=100 | ID@TC=100 | -27 | A | -VGS @ -10V1 | |||
| Pulsed Drain Current | IDM | -70 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 113 | mJ | 3 | |||
| Avalanche Current | IAS | 47.6 | A | ||||
| Total Power Dissipation, TC=25 | PD@TC=25 | 52.1 | W | ||||
| Storage Temperature Range | TSTG | -55 to 150 | |||||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V , ID=-250uA | -60 | ||
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | V/ | Reference to 25 , ID=-1mA | -0.035 | |||
| Static Drain-Source On-Resistance | RDS(ON) | 23 | mΩ | VGS=-10V , ID=-18A2 | 23 | 27 | |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | mΩ | VGS=-4.5V , ID=-12A2 | |||
| Gate Threshold Voltage | VGS(th) | -1.0 to -2.5 | V | VGS=VDS , ID =-250uA | -1.0 | -2.5 | |
| VGS(th) Temperature Coefficient | ΔVGS(th) | mV/ | 4.28 | ||||
| Drain-Source Leakage Current | IDSS | uA | VDS=-48V , VGS=0V , TJ=25 | 1 | |||
| Drain-Source Leakage Current | IDSS | uA | VDS=-48V , VGS=0V , TJ=55 | 5 | |||
| Gate-Source Leakage Current | IGSS | nA | VGS=±20V , VDS=0V | ±100 | |||
| Forward Transconductance | gfs | S | VDS=-10V , ID=-18A | 23 | |||
| Gate Resistance | Rg | Ω | VDS=0V , VGS=0V , f=1MHz | 7 | |||
| Total Gate Charge | Qg | nC | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | |||
| Gate-Source Charge | Qgs | nC | 6.7 | ||||
| Gate-Drain Charge | Qgd | nC | 5.5 | ||||
| Turn-On Delay Time | td(on) | ns | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A | 38 | |||
| Rise Time | tr | ns | 23.6 | ||||
| Turn-Off Delay Time | td(off) | ns | 100 | ||||
| Fall Time | tf | ns | 6.8 | ||||
| Input Capacitance | Ciss | pF | VDS=-15V , VGS=0V , f=1MHz | 3635 | |||
| Output Capacitance | Coss | pF | 224 | ||||
| Reverse Transfer Capacitance | Crss | pF | 141 | ||||
| Continuous Source Current | IS | -45 | A | VG=VD=0V , Force Current1,5 | |||
| Pulsed Source Current | ISM | -70 | A | 2,5 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V , IS=-1A , TJ=252 |
2504101957_GOODWORK-AOD409-GK_C42456340.pdf
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