High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications
Key Attributes
Model Number:
9435-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@10V,4.1A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
56pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
530pF@15V
Pd - Power Dissipation:
1.5W
Output Capacitance(Coss):
70pF
Gate Charge(Qg):
6.8nC@10V
Mfr. Part #:
9435-GK
Package:
SOP-8
Product Description
Product Overview
The 9435 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements with full function reliability. This device features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology, making it suitable for fast switching applications.
Product Attributes
- Product Name: 9435
- Product Type: P-Ch MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
| VDS | Drain-Source Voltage | -30 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | ||||
| ID@TJ=25C | Continuous Drain Current, VGS @ -10V | -5.3 | A | 1 | |||
| ID@TJ=70C | Continuous Drain Current, VGS @ -10V | -4.7 | A | 1 | |||
| IDM | Pulsed Drain Current | -20 | A | 2 | |||
| EAS | Single Pulse Avalanche Energy | mJ | 3 | ||||
| IAS | Avalanche Current | A | |||||
| PD@TJ=25C | Total Power Dissipation | 1.5 | W | 4 | |||
| TSTG | Storage Temperature Range | -55 to 150 | |||||
| TJ | Operating Junction Temperature Range | -55 to 150 | |||||
| JA | Thermal Resistance Junction-Ambient | /W | 55 | ||||
| V(BR)DSS | Drain-Source Breakdown Voltage | -30 | V | VGS= 0V, ID = 250A | -30 | ||
| IDSS | Zero Gate Voltage Drain Current | -1 | A | VDS= -30V, VGS= 0V | |||
| IGSS | Gate-Source Leakage | 100 | nA | VDS= 0V, VGS= 20V | |||
| VGS(th) | Gate-Source Threshold voltage | -1 to -2.5 | V | VDS= VGS, ID = 250A | -1 | -1.5 | -2.5 |
| RDS(on) | Drain-Source on-State Resistance | 36 | m | VGS= -10V, ID = -4.1A | 51 | ||
| RDS(on) | Drain-Source on-State Resistance | 48 | m | VGS= -4.5V, ID = -3A | 79 | ||
| Ciss | Input Capacitance | 530 | pF | VGS = 0V , VDS = -15V, f = 1.0MHz | |||
| Coss | Output Capacitance | 70 | pF | VGS = 0V , VDS = -15V, f = 1.0MHz | |||
| Crss | Reverse Transfer Capacitance | 56 | pF | VGS = 0V , VDS = -15V, f = 1.0MHz | |||
| Qg | Total Gate Charge | 6.8 | nC | VGS = -10V, VDS = -15V, ID = -4.1A | |||
| Qgs | GateSource Charge | 1.0 | nC | VGS = -10V, VDS = -15V, ID = -4.1A | |||
| Qgd | GateDrain Charge | 1.4 | nC | VGS = -10V, VDS = -15V, ID = -4.1A | |||
| td(on) | Turn-on Delay Time | 14 | ns | VGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5 | |||
| tr | Rise Time | 61 | ns | VGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5 | |||
| td(off) | Turn-off Delay time | 19 | ns | VGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5 | |||
| tf | Fall Time | 10 | ns | VGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5 | |||
| VSD | Diode Forward Voltage | -1.2 | V | IS = -4.1A, VGS = 0V | |||
| IS | Continuous Source Current | -5.3 | A |
2504101957_GOODWORK-9435-GK_C46061577.pdf
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