N Channel Enhancement Mode MOSFET GOODWORK 4N65 designed for fast switching and power management
Key Attributes
Model Number:
4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
4N65
Package:
TO-252
Product Description
Product Overview
The 4N65 is an N-Channel Enhancement Mode MOSFET designed for efficient power switching applications. It features low gate charge, low Ciss, and fast switching capabilities, making it suitable for various electronic circuits. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and performance. It is packaged in a TO-252 package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250A | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS = 650 V, VGS = 0 V | 10 | A | ||
| Gate-Source Leakage Current Forward | IGSS | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| Gate-Source Leakage Current Reverse | IGSS | VGS = -30 V, VDS = 0 V | -100 | nA | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=250A, Referenced to 25C | 0.6 | V/ | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS = 10 V, ID = 4A | 2.0 | 2.4 | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CISS | VDS = 25 V, VGS = 0V, f = 1MHz | 520 | 670 | pF | |
| Output Capacitance | COSS | VDS = 25 V, VGS = 0V, f = 1MHz | 70 | 90 | pF | |
| Reverse Transfer Capacitance | CRSS | VDS = 25 V, VGS = 0V, f = 1MHz | 8 | 11 | pF | |
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | tD(ON) | VDD = 325V, ID = 4.0A, RG = 25 (Note 1, 2) | 13 | 35 | ns | |
| Turn-On Rise Time | tR | VDD = 325V, ID = 4.0A, RG = 25 (Note 1, 2) | 45 | 100 | ns | |
| Turn-Off Delay Time | tD(OFF) | VDD = 325V, ID = 4.0A, RG = 25 (Note 1, 2) | 25 | 60 | ns | |
| Turn-Off Fall Time | tF | VDD = 325V, ID = 4.0A, RG = 25 (Note 1, 2) | 35 | 80 | ns | |
| Total Gate Charge | QG | VDS= 520V,ID = 2A, VGS= 10V (Note 1, 2) | 15 | 20 | nC | |
| Gate-Source Charge | QGS | VDS= 520V,ID = 2A, VGS= 10V (Note 1, 2) | 3.4 | nC | ||
| Gate-Drain Charge | QGD | VDS= 520V,ID = 2A, VGS= 10V (Note 1, 2) | 7.1 | nC | ||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, IS = 4.0A | 1.4 | V | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.4 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 17.6 | A | |||
| Reverse Recovery Time | trr | VGS = 0V, IS = 4.0A, dIF/dt = 100 A/s (Note 1) | 250 | ns | ||
| Reverse Recovery Charge | QRR | VGS = 0V, IS = 4.0A, dIF/dt = 100 A/s (Note 1) | 1.5 | C | ||
2410121714_GOODWORK-4N65_C2962211.pdf
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