Voltage Controlled Small Signal MOSFET DMG2305UX SOT23 Plastic Encapsulated Switching Component
Key Attributes
Model Number:
DMG2305UX
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-50℃~+150℃
RDS(on):
50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
290pF@4V
Number:
1 P-Channel
Output Capacitance(Coss):
740pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
740pF@4V
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
DMG2305UX
Package:
SOT-23
Product Description
Product Overview
The DMG2305UX is a SOT-23 Plastic-Encapsulated MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), offering a rugged and reliable solution with high saturation current capability. This MOSFET is suitable for various electronic circuits requiring efficient switching.
Product Attributes
- Marking Type number: DMG2305UX
- Marking code: A5SHB
- Package: SOT-23
- Technology: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Continuous Source-Drain Diode Current | IS | -0.8 | A | |||
| Maximum Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 96.2 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -50 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-8V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-3.5A | 40 | m | ||
| VGS =-2.5V, ID =-3A | 55 | |||||
| VGS =-1.8V,ID=-2.0A | 90 | 120 | ||||
| a. Pulse Test ; Pulse Width 300s, Duty Cycle 2%. | ||||||
| Forward transconductance | gfs | VDS =-5V, ID =-4.1A | 6 | S | ||
| Input capacitance | Ciss | VDS =-4V,VGS =0V,f =1MHz | 740 | pF | ||
| Output capacitance | Coss | VDS =-4V,VGS =0V,f =1MHz | 290 | |||
| Reverse transfer capacitance | Crss | VDS =-4V,VGS =0V,f =1MHz | 190 | |||
| Total gate charge | Qg | VDS =-4V,VGS =-4.5V, ID =-4.1A | 7.8 | 15 | nC | |
| Gate-source charge | Qgs | VDS =-4V,VGS =-4.5V, ID =-4.1A | 4.5 | 9 | ||
| Gate-drain charge | Qg d | VDS =-4V,VGS =-4.5V, ID =-4.1A | 1.2 | |||
| Gate resistance | Rg | f =1MHz | 1.4 | 7 | ||
| Turn-on delay time | td(on) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 13 | 20 | ns | |
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 5 | 10 | ||||
| b. Guaranteed by design, not subject to production testing. | ||||||
| c. These parameters have no way to verify. | ||||||
| Rise time | tr | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 35 | 53 | ||
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 11 | 17 | ||||
| Turn-off Delay time | td(off) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 32 | 48 | ||
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 22 | 33 | ||||
| Fall time | tf | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 10 | 20 | ns | |
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 16 | 24 | ||||
| Continuous source-drain diode current | IS | TC=25 | -1.4 | A | ||
| Pulse diode forward current | ISM | -10 | A | |||
| Body ciode voltage | VSD | IF=-3.3A | -1.2 | V | ||
| d. Device mounted on 1"1" FR-4 PCB with high coverage 2oz Copper ,double sided. Copper, t10s. |
2411081754_GOODWORK-DMG2305UX_C42186056.pdf
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