Switching MOSFET GOODWORK 50N06NF N Channel Device with Low Gate Charge and High Current Handling
Key Attributes
Model Number:
50N06NF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
11mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
97pF@48V
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
2.423nF@48V
Gate Charge(Qg):
19.3nC@4.5V
Mfr. Part #:
50N06NF
Package:
DFN-8L(5x6)
Product Description
Product Overview
The 50N06D is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | BVDSS (V) | RDS(ON) (m) | ID (A) | VGS(th) (V) | Qg (nC) | Ciss (pF) | Coss (pF) | Crss (pF) |
| 50N06NF | 60 | 11-15 (VGS=10V, ID=20A) | 50 (TC=25, VGS@10V) | 1.2-2.5 | 19.3 (VDS=48V, VGS=4.5V, ID=15A) | 2423 (VDS=15V, VGS=0V, f=1MHz) | 145 (VDS=15V, VGS=0V, f=1MHz) | 97 (VDS=15V, VGS=0V, f=1MHz) |
2410121522_GOODWORK-50N06NF_C22466474.pdf
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