N channel MOSFET GOODWORK 50N06 TO 252 with low gate charge and high cell density trench technology
Key Attributes
Model Number:
50N06(TO-252)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
RDS(on):
11mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
930pF@25V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
50N06(TO-252)
Package:
TO-252
Product Description
Product Overview
The 50N06 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval and features advanced high cell density Trench technology for fast switching and low gate charge.
Product Attributes
- Certifications: RoHS, Green Product
- Guarantees: 100% EAS Guaranteed
- Technology: Advanced high cell density Trench technology
- Features: Super Low Gate Charge, Excellent CdV/dt effect decline
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 60 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | TC = 25 | 45 | A | ||
| TC = 100 | 29 | A | ||||
| IDM | Pulsed Drain Current (note1) | 180 | A | |||
| EAS | Single Pulsed Avalanche Energy (note2) | 36 | mJ | |||
| PD | Power Dissipation | TC = 25 | 60 | W | ||
| RJC | Thermal Resistance, Junction to Case | 2.5 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| Electrical Characteristics | ||||||
| TJ=25 unless otherwise specified | ||||||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | - | - | 1.0 | μA |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±20V | - | - | ±100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=20A | - | 11 | 14 | mΩ |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=10A | - | 14 | 20 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 930 | - | pF |
| Coss | Output Capacitance | - | 230 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 8 | - | pF | |
| Qg | Total Gate Charge | VDS=30V, ID=20A, VGS=10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | - | 4.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 3.5 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | - | 4.5 | - | ns |
| tr | Turn-on Rise Time | - | 2.7 | - | ns | |
| td(off) | Turn-off Delay Time | - | 13.8 | - | ns | |
| tf | Turn-off Fall Time | - | 2.7 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 45 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 180 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | TJ=25, IF=20A,dI/dt=100A/μs | - | 18 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 12 | - | nC | |
2409302201_GOODWORK-50N06-TO-252_C5818970.pdf
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