synchronous buck converter P channel MOSFET GOODWORK 50P06 with low RDS ON and 100 percent EAS guaranteed
Key Attributes
Model Number:
50P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
23mΩ@10V,18A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
52.1W
Input Capacitance(Ciss):
3.635nF@15V
Output Capacitance(Coss):
224pF
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
50P06
Package:
TO-252
Product Description
Product Overview
The 50P06 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, ensuring high efficiency. This device meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full functional reliability.
Product Attributes
- Green Device Available
- RoHS Compliant
- 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -50 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -27 | A | |||
| IDM | Pulsed Drain Current2 | -70 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 113 | mJ | |||
| IAS | Avalanche Current | 47.6 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.035 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | 23 | 27 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-12A | 33 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 4.28 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=55 | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | 23 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 7 | Ω | ||
| Qg | Total Gate Charge | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | nC | ||
| Qgs | Gate-Source Charge | 6.7 | ||||
| Qgd | Gate-Drain Charge | 5.5 | ||||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A | 38 | ns | ||
| tr | Rise Time | 23.6 | ||||
| td(off) | Turn-Off Delay Time | 100 | ||||
| tf | Fall Time | 6.8 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3635 | pF | ||
| Coss | Output Capacitance | 224 | ||||
| Crss | Reverse Transfer Capacitance | 141 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -45 | A | ||
| ISM | Pulsed Source Current2,5 | -70 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
2504101957_GOODWORK-50P06_C47089138.pdf
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