Power Management Solution Guangdong Hottech IRLML5203 P Channel MOSFET with Ultra Low On Resistance
Key Attributes
Model Number:
IRLML5203
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
RDS(on):
98mΩ@10V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
43pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
510pF@0V
Gate Charge(Qg):
14nC
Mfr. Part #:
IRLML5203
Package:
SOT-23
Product Description
Product Overview
The IRLML5203 is a P-Channel Power MOSFET featuring Generation V Technology, offering ultra-low on-resistance and a low profile (<1.1mm) for fast switching applications. It is designed for efficient power management in various electronic circuits.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability Classification: UL94V-0
Technical Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
| VDS (Drain-Source Voltage) | -30 | V | |||
| ID (Continuous Drain Current) @ TA = 25C | -3.0 | A | VGS @ -10V | ||
| ID (Continuous Drain Current) @ TA= 70C | -2.4 | A | VGS @ -10V | ||
| IDM (Pulsed Drain Current) | -24 | A | |||
| PD (Power Dissipation) @TA = 25C | 1.25 | W | |||
| PD (Power Dissipation) @TA = 70C | 0.80 | W | |||
| Linear Derating Factor | 10 | mW/C | |||
| VGS (Gate-to-Source Voltage) | 20 | V | |||
| TJ, TSTG (Junction and Storage Temperature Range) | -55 | +150 | C | ||
| RJA (Maximum Junction-to-Ambient) | 100 | C/W | |||
| V(BR)DSS (Drain-to-Source Breakdown Voltage) | -30 | V | VGS = 0V, ID = -250A | ||
| V(BR)DSS/TJ (Breakdown Voltage Temp. Coefficient) | 0.019 | V/C | Reference to 25C, ID = -1mA | ||
| RDS(on) (Static Drain-to-Source On-Resistance) | 98 | m | VGS = -10V, ID = -3.0A | ||
| RDS(on) (Static Drain-to-Source On-Resistance) | 165 | m | VGS = -4.5V, ID = -2.6A | ||
| VGS(th) (Gate Threshold Voltage) | -1.0 | -2.5 | V | VDS = VGS, ID = -250A | |
| gfs (Forward Transconductance) | 3.1 | S | VDS = -10V, ID = -3.0A | ||
| IDSS (Drain-to-Source Leakage Current) | -1.0 | A | VDS = -24V, VGS = 0V | ||
| IDSS (Drain-to-Source Leakage Current) | -5.0 | A | VDS = -24V, VGS = 0V, TJ = 70C | ||
| IGSS (Gate-to-Source Forward Leakage) | -100 | nA | VGS = -20V | ||
| IGSS (Gate-to-Source Reverse Leakage) | 100 | nA | VGS = 20V | ||
| Qg (Total Gate Charge) | 9.5 | 14 | nC | ID = -3.0A, VDS = -24V, VGS = -10V | |
| Qgs (Gate-to-Source Charge) | 2.3 | 3.5 | nC | ||
| Qgd (Gate-to-Drain "Miller" Charge) | 1.6 | 2.4 | nC | ||
| td(on) (Turn-On Delay Time) | 12 | ns | VDD = -15V, ID = -1.0A, RG = 6.0, VGS = -10V | ||
| tr (Rise Time) | 18 | ns | |||
| td(off) (Turn-Off Delay Time) | 88 | ns | |||
| tf (Fall Time) | 52 | ns | |||
| Ciss (Input Capacitance) | 510 | pF | VGS = 0V, VDS = -25V, = 1.0MHz | ||
| Coss (Output Capacitance) | 71 | pF | |||
| Crss (Reverse Transfer Capacitance) | 43 | pF | |||
| IS (Continuous Source Current (Body Diode)) | -1.3 | A | |||
| ISM (Pulsed Source Current (Body Diode)) | -24 | A | |||
| VSD (Diode Forward Voltage) | -1.2 | V | TJ = 25C, IS = -1.3A, VGS = 0V | ||
| trr (Reverse Recovery Time) | 17 | 26 | ns | TJ = 25C, IF = -1.3A, di/dt = -100A/s | |
| Qrr (Reverse Recovery Charge) | 12 | 18 | nC |
2410122008_Guangdong-Hottech-IRLML5203_C5364310.pdf
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