power MOSFET GOODWORK 120N03 designed for synchronous buck converter featuring low RDS ON resistance
Key Attributes
Model Number:
120N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
RDS(on):
3.8mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
850pF
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
2.971nF
Gate Charge(Qg):
28.8nC@10V
Mfr. Part #:
120N03
Package:
TO-252
Product Description
Product Overview
The 120N03 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, ensuring efficient performance. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability.
Product Attributes
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 75 | A | |||
| IDM | Pulsed Drain Current2 | 384 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 198 | mJ | |||
| IAS | Avalanche Current | 53.8 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 62.5 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 2.42 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250mA | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V, VGS=0V | - | - | 1 | mA |
| TJ=85°C | - | - | 30 | µA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250mA | 1.4 | 1.7 | 2.5 | V |
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| RDS(ON)d | Drain-Source On-state Resistance | VGS=10V, IDS=20A | - | 2.5 | 3.8 | mΩ |
| TJ=125°C | - | 4.4 | - | mΩ | ||
| VGS=4.5V, IDS=15A | - | 4.0 | 5.5 | mΩ | ||
| gFS | Forward Transconductance | VDS=5V, IDS=10A | - | 24.6 | - | S |
| Diode Characteristics | ||||||
| VSDd | Diode Forward Voltage | ISD=20A, VGS=0V | - | 0.8 | 1.1 | V |
| trr | Reverse Recovery Time | ISD=20A, dISD/dt=100A/ms | - | 35.6 | - | ns |
| ta | Charge Time | - | 19.3 | - | ||
| tb | Discharge Time | - | 16.3 | - | ||
| Qrr | Reverse Recovery Charge | - | 26 | - | nC | |
| Dynamic Characteristics | ||||||
| RGe | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 1 | 2 | Ω |
| Ciss | Input Capacitance | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 2485 | 2971 | pF |
| Coss | Output Capacitance | - | 850 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 85 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | - | 12.4 | 23 | ns |
| tr | Turn-on Rise Time | - | 9.5 | 18 | ns | |
| td(OFF) | Turn-off Delay Time | - | 27.2 | 49 | ns | |
| tf | Turn-off Fall Time | - | 35.2 | 64 | ns | |
| Gate Charge Characteristics | ||||||
| Qge | Total Gate Charge | VDS=15V, VGS=10V, IDS=20A | - | 20.6 | 28.8 | nC |
| VDS=15V, VGS=4.5V, IDS=20A | - | 9.8 | - | nC | ||
| Qgth | Threshold Gate Charge | - | 1.8 | - | ||
| Qgs | Gate-Source Charge | - | 3.8 | - | ||
| Qgd | Gate-Drain Charge | - | 3.7 | - | ||
2408021727_GOODWORK-120N03_C22470952.pdf
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