Low on resistance N channel MOSFET Guangdong Hottech HKTG90N03 ideal for power management applications
Key Attributes
Model Number:
HKTG90N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
3.8mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
240pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2nF@15V
Pd - Power Dissipation:
90W
Mfr. Part #:
HKTG90N03
Package:
PDFN5x6-8
Product Description
Product Overview
The HKTG90N03 is an N-channel MOSFET designed for efficient power management. It features low on-resistance, fast switching speeds, and easily designed drive circuits, making it suitable for parallel configurations and various electronic applications.
Product Attributes
- Brand: HKT (HEKETAI)
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Marking: G90N03
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250uA | ||
| Zero gate voltage drain current | IDSS | 1 | A | VDS=30V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | ||
| Gate-threshold voltage | VGS(th) | V | VDS=20V,ID=250A | |||
| Drain-source on-resistance | RDS(ON) | 5 | 7 | m | VGS=10V, ID=20A; VGS=4.5V, ID=10A | |
| Input capacitance | Ciss | 2000 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 320 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 240 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Turn-on delay time | td(on) | 13 | nS | VDD=15V. VGS=10V,ID =30A Rg=3 | ||
| Turn-on rise time | tr | 36 | nS | VDD=15V. VGS=10V,ID =30A Rg=3 | ||
| Turn-off delay time | td(off) | 42 | nS | VDD=15V. VGS=10V,ID =30A Rg=3 | ||
| Turn-off fall time | tf | 16 | nS | VDD=15V. VGS=10V,ID =30A Rg=3 | ||
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current | ID | 90 | A | |||
| Power dissipation | PD | 90 | W | |||
| Thermal resistance Junction to ambient | RJA | 18 | C/W | |||
| Junction and Storage temperature | TJ,TSTG | -55 | +150 | C |
Package Information (PDFN5x6)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 | |
2410122022_Guangdong-Hottech-HKTG90N03_C5190212.pdf
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