Power Electronics MOSFET Guangdong Hottech HKTD4N65 Featuring Molded Plastic Case and TO 252 Package
Key Attributes
Model Number:
HKTD4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.6Ω@10V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
450pF
Pd - Power Dissipation:
23.1W
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
HKTD4N65
Package:
TO-252
Product Description
Product Overview
This N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and high performance. It is designed for applications requiring high voltage and current capabilities, with a fully characterized avalanche voltage and current rating. The MOSFET comes in a TO-252 package, suitable for various power electronics applications.
Product Attributes
- Brand: HKTD4N65
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability: UL 94V-0
- Marking: D4N65 A
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| ELECTRICAL CHARACTERISTICS | V(BR)DSS | VGS = 0V, ID = 250A | 650 | -- | -- | V |
| IDSS | VDS = 650V, VGS = 0V, TJ = 25C | -- | -- | 100 | nA | |
| IGSS | VGS = 30V | -- | -- | 100 | nA | |
| VGS(th) | VDS = VGS, ID = 250A | 2.0 | -- | 4.0 | V | |
| RDS(on) | VGS = 10V, ID =1A | -- | 2.22 | 2.6 | ||
| IS | TC = 25 C | -- | -- | 4 | A | |
| MAXIMUM RATINGS | VDS | -- | -- | -- | 650 | V |
| ID | VGS=10V | -- | -- | 4 | A | |
| IDM | -- | -- | -- | 16 | A | |
| AVALANCHE CHARACTERISTICS | EAS | VDD=20V,L=0.5mH, RG=25, Starting TJ = 25C | -- | -- | 250 | mJ |
| PD | -- | -- | -- | 23.1 | W | |
| RJA | -- | -- | 100 | C/W |
2410121807_Guangdong-Hottech-HKTD4N65_C5364285.pdf
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