GOODWORK FDN304P GK trenched P channel MOSFET designed for and synchronous buck converter operation
Key Attributes
Model Number:
FDN304P-GK
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.1A
RDS(on):
33mΩ@4.5V,4.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
830pF@10V
Pd - Power Dissipation:
1.31W
Gate Charge(Qg):
8.8nC@4.5V
Mfr. Part #:
FDN304P-GK
Package:
SOT-23
Product Description
Product Overview
The FDN304P is a high cell density trenched P-channel MOSFET designed for excellent RDS(on) and gate charge, making it ideal for synchronous buck converter applications. This Green Device meets RoHS requirements and offers full function reliability. It features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: DEMACHEL
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V | -4.1 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V | -3.0 | A | |||
| IDM | Pulsed Drain Current | -16 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.31 | W | |||
| PD@TA=70 | Total Power Dissipation | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250µA | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS= -20V, VGS=0V | -1 | µA | ||
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±12V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250µA | -0.4 | -0.7 | -1.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -4.5V, ID= -4.1A | 33 | 45 | Ω | |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -2.5V, ID= -3A | 42 | mΩ | ||
| Ciss | Input Capacitance | VDS= -10V, VGS=0V, f=1.0MHz | 830 | pF | ||
| Coss | Output Capacitance | 132 | pF | |||
| Crss | Reverse Transfer Capacitance | 85 | pF | |||
| Qg | Total Gate Charge | VDS= -10V, ID= -2A, VGS= -4.5V | 8.8 | nC | ||
| Qgs | Gate-Source Charge | 1.4 | nC | |||
| Qgd | Gate-Drain(Miller) Charge | 1.9 | nC | |||
| td(on) | Turn-on Delay Time | VDD= -10V, ID= -3.3A, RG= 1Ω, VGEN= -4.5V | 10 | ns | ||
| tr | Turn-on Rise Time | 32 | ns | |||
| td(off) | Turn-off Delay Time | 50 | ns | |||
| tf | Turn-off Fall Time | 51 | ns | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | -5.0 | A | |||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -16 | A | |||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -4.1A | -1.2 | V | ||
2504101957_GOODWORK-FDN304P-GK_C46962147.pdf
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