High Collector Current PNP Bipolar Transistor Guangdong Hottech S8550 in Surface Mount SOT23 Package
Key Attributes
Model Number:
S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550
Package:
SOT-23
Product Description
Product Overview
The S8550 is a PNP bipolar transistor designed for general-purpose applications. It offers excellent hFE linearity, high collector current capability, and is available in a surface-mount SOT-23 package. It serves as a complementary device to the S8050 transistor.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Marking: 2TY (Rank L), H (Rank H), J (Rank J)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature | TSTG | -55 | +150 | C | ||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100uAIE=0 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-1mAIB=0 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100uAIC=0 | ||
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-40V, IE=0 | ||
| Collector cut-off current | ICEO | -0.1 | uA | VCE=-20V, IB=0 | ||
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-3V, IC=0 | ||
| DC current gain | hFE1 | 120 | 400 | VCE=-1V, IC=-50mA | ||
| DC current gain | hFE2 | 50 | VCE=-1V, IC=-500mA | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.6 | V | IC=-500mAIB=-50mA | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-500mAIB=-50mA | ||
| Transition frequency | fT | 150 | MHz | VCE=-6V,IC=-20mA,f=30MHz | ||
| Thermal Resistance Junction To Ambient | RJA | 417 | C/W |
2205061000_Guangdong-Hottech-S8550_C181159.pdf
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