Low RDS ON Trench MOSFET designed for DC DC converters and portable devices GOODWORK FDV303N GK model
Key Attributes
Model Number:
FDV303N-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
270mΩ@4.5V,200mA
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.4pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
715mW
Input Capacitance(Ciss):
37pF@25V
Gate Charge(Qg):
650pC@4.5V
Mfr. Part #:
FDV303N-GK
Package:
SOT-23
Product Description
Product Overview
The FDV303N is a 30V, single N-channel Trench MOSFET designed for fast switching applications. It features low RDS(ON) and utilizes Trench MOSFET technology. This device is Pb-Free and compliant with RoHS requirements and Halogen Free. It is suitable for various applications including low-side load switches, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones.
Product Attributes
- Brand: DEMA CHELL
- Certifications: Pb Free, RoHS Compliant, Halogen Free
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Unit | |
| STATIC CHARACTERISTICS | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage (VGS =0V, ID =250A) | 30 | - | - | V | |
| VGS(th) | Gate Threshold Voltage (VDS =VGS , ID =250A) | 0.6 | 1.0 | 1.2 | V | |
| IDSS | Zero Gate Voltage Drain Current (VDS =30V, VGS =0V) | - | - | 0.4 | A | |
| IGSS | Gate-Body Leakage Current (VDS =0V, VGS =10V) | - | 10 | - | A | |
| RDS(ON) | Drain-Source On-Resistance (VGS =4.5V, ID = 200mA) | - | 0.65 | - | ||
| Drain-Source On-Resistance (VGS =2.5V, ID = 200mA) | - | 0.87 | - | |||
| VSD | Diode Forward Voltage (IS =300mA, VGS =0V) | - | - | 1.2 | V | |
| DYNAMIC PARAMETERS | ||||||
| Qg | Total Gate Charge | - | 5.4 | - | nC | |
| Qgs | Gate-Source Charge | - | 1.1 | - | nC | |
| Qgd | Gate-Drain Charge | - | 0.15 | - | nC | |
| Ciss | Input Capacitance | - | 37 | - | pF | |
| Coss | Output Capacitance | - | 27 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.5 | - | pF | |
| td(on) tr td(off) tf | Turn-On Delay Time | - | 8.6 | - | ns | |
| Rise Time | - | 13 | - | |||
| Turn-Off Delay Time | - | 14 | - | |||
| Fall Time | - | 9.5 | - | |||
| MAXIMUM RATINGS | ||||||
| VDSS | Drain-to-Source Voltage | - | - | 30 | V | |
| VGS | Gate-to-Source Voltage | - | - | 10 | V | |
| ID | Drain Current (Note 1) Steady State | (TA = 25C) | - | 30 | - | mA |
| (TA = 100C) | - | - | - | |||
| IDM | Pulsed Drain Current (tp = 10 s) | - | - | 1000 | mA | |
| PD | Power Dissipation (Note 1) Steady State | - | - | 260 | mW | |
| RJA | Junction-to-Ambient (Note 1) Steady State | - | 715 | - | /W | |
| TJ , TSTG | Operating Junction and Storage Temperature Range | -55 | - | +150 | ||
| TL | Lead Temperature for Soldering Purposes (1/8 from case for 10 s) | - | - | 260 | ||
2504101957_GOODWORK-FDV303N-GK_C42456341.pdf
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