power MOSFET Guangdong Hottech HKTQ65N03 low voltage N channel device with ultra low on resistance
Key Attributes
Model Number:
HKTQ65N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
65A
RDS(on):
5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
260pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
37W
Input Capacitance(Ciss):
1.92nF@15V
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
HKTQ65N03
Package:
PDFN3333
Product Description
Product Overview
The HKTQ65N03 is a low voltage N-channel MOSFET designed for efficient power management. It features ultra-low on-resistance, making it ideal for low power DC to DC converters and load switch applications. This surface mount device comes in a PDFN3333 package.
Product Attributes
- Brand: HKT (GUANGDONG HOTTECH INDUSTRIAL CO.,LTD)
- Origin: China (implied by manufacturer name)
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Marking: Q65N03
- Email: hkt@heketai.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| MAXIMUM RATINGS | VDS Drain-Source Voltage | 30 | V | |||
| VGS Gate-Source Voltage | ±20 | V | ||||
| ID@TC=25 Continuous Drain Current | 65 | A | ||||
| ID@TC=100 Continuous Drain Current | 45 | A | ||||
| ELECTRICAL CHARACTERISTICS | BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) Static Drain-Source On-Resistance | VGS=10 V , ID=20A | 3.8 | 5 | m | ||
| VGS=4.5V , ID=10A | 5.5 | 7 | m | |||
| CAPACITANCE | Ciss Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1920 | pF | ||
| Coss Output Capacitance | 300 | pF | ||||
| Crss Reverse Transfer Capacitance | 260 | pF |
2410121744_Guangdong-Hottech-HKTQ65N03_C5364302.pdf
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