Power switching and load switch applications enhanced by GOODWORK SI2307 p channel mosfet technology
Key Attributes
Model Number:
SI2307
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
RDS(on):
65mΩ@10V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
226pF@15V
Pd - Power Dissipation:
1.4W
Output Capacitance(Coss):
39pF
Gate Charge(Qg):
2.5nC@4.5V
Mfr. Part #:
SI2307
Package:
SOT-23
Product Description
Product Overview
The SI2307 is a high cell density trenched P-channel MOSFET designed for excellent RDSON and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. This device features Green Device availability, super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.
Product Attributes
- Brand: DEMACHEL
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
| Product Summary | BVDSS | -30 | V | ||||
| RDSON | 65 | m | ID=-3A, VGS=-10V | 65 | 95 | ||
| ID | -3 | A | TA=25 | ||||
| ID | -1.6 | A | TA=70 | ||||
| IDM | -10 | A | Pulsed | ||||
| PD | 1.4 | W | TA=25 | ||||
| PD | 0.9 | W | TA=70 | ||||
| TSTG | -55 to 150 | ||||||
| Off Characteristics | BVDSS | -30 | V | VGS=0V , ID=-250uA | -30 | ||
| BVDSS/TJ | -0.02 | V/ | Reference to 25 , ID=-1mA | -0.02 | |||
| IDSS | -1 | uA | VDS=-27V , VGS=0V , TJ=25 | -1 | |||
| IDSS | -10 | uA | VDS=-24V , VGS=0V , TJ=125 | -10 | |||
| IGSS | 100 | nA | VGS=20V , VDS=0V | 100 | |||
| RJA | 105 | /W | 105 | ||||
| On Characteristics | RDS(ON) | 65 | m | VGS=-10V , ID=-3A | 65 | 95 | |
| RDS(ON) | 110 | m | VGS=-4.5V , ID=-2A | 110 | 145 | ||
| VGS(th) | -1.0 to -2.5 | V | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | |
| VGS(th) | -2.8 | mV/ | -2.8 | ||||
| Dynamic and switching Characteristics | Qg | 2.5 | nC | VDS=-24V , VGS=-4.5V , ID=-2A | 2.5 | ||
| Qgs | 0.1Qg | nC | |||||
| Qgd | 1.8 | nC | 1.8 | ||||
| Td(on) | 6.1 | ns | VDD=-15V , VGS=-10V , RG=6 ID=-1A | 6.1 | |||
| Tr | 8.7 | ns | 8.7 | ||||
| Td(off) | 33.2 | ns | 33.2 | ||||
| Tf | 3.7 | ns | 3.7 | ||||
| Capacitance | Ciss | 226 | pF | VDS=-15V , VGS=0V , F=1MHz | 226 | ||
| Coss | 39 | pF | 39 | ||||
| Crss | 29 | pF | 29 | ||||
| Gate resistance | Rg | 9.5 | VGS=0V, VDS=0V, F=1MHz | 9.5 | |||
| Drain-Source Diode | IS | -3.3 | A | VG=VD=0V , Force Current | -3.3 | ||
| ISM | -6.6 | A | Pulsed | -6.6 | |||
| VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25 | -1.2 |
2504101957_GOODWORK-SI2307_C46061574.pdf
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