Power MOSFET Guangdong Hottech HKTD20N06 with Ultra Low On Resistance and 60V Drain Source Voltage
Key Attributes
Model Number:
HKTD20N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
48mΩ@5V,5A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
60pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.5nF
Mfr. Part #:
HKTD20N06
Package:
TO-252
Product Description
Product Overview
This N-CHANNEL Power MOSFET, model HKTD20N06, is designed for high-performance power applications. It features a high density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. The device is housed in a TO-252 package, suitable for various electronic circuits.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Case Material: Molded Plastic
- Flammability: UL 94V-0
- Marking: D20N06
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| FEATURES | ||||||
| Drain-Source Voltage | VDS | 60 | V | Max. | ||
| Continuous Drain Current | ID | 20 | A | VGS=10V Max. | ||
| Drain-Source On-Resistance | RDS(ON) | 28 | 37 | m | VGS=10V, ID=10A | |
| Drain-Source On-Resistance | RDS(ON) | 35 | 48 | m | VGS=5V, ID=5A | |
| Avalanche Energy | EAS | 70 | mJ | Note 1 | ||
| MECHANICAL DATA | ||||||
| Case | TO-252 | |||||
| Weight | 0.33 | grams | approximate | |||
| MAXIMUM RATINGS | ||||||
| Drain-source voltage | VDS | 60 | V | (TA=25C unless otherwise noted) | ||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current | ID | 20 | A | VGS=10V | ||
| Pulsed drain current | IDM | 60 | A | (Note 1) | ||
| Power dissipation | PD | 45 | W | |||
| Thermal resistance from junction to ambient | RJA | 100 | C/W | |||
| Operating junction and storage temperature | TJ,TSTG | -55 | +150 | C | ||
| Single Pulsed Avalanche Energy | EAS | 70 | mJ | (note 1) | ||
| Lead Temperature for Soldering Purposes | TL | 260 | C | (1/8 from case for 10s) | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source breakdown voltage | V(BR)DS | 60 | V | VGS=0V,ID=250A | ||
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=60V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | ||
| Gate-threshold voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance | RDS(ON) | 28 | 37 | m | VGS=10V, ID=10A | |
| Drain-source on-resistance | RDS(ON) | 35 | 48 | m | VGS=4.5V,ID= 5A | |
| Forward transconductance | gFS | 10 | S | VDS=5V,ID=20A | ||
| Input capacitance | Ciss | 1500 | pF | VGS=0V VDS=30V f=1.0MHz | ||
| Output capacitance | Coss | 75 | pF | |||
| Reverse transfer capacitance | Crss | 60 | pF | |||
| Turn-on delay time | td(on) | 8 | ns | VDD=30V ID=20A RG=1.8 VGS=10V | ||
| Turn-on rise time | tr | 20 | ns | |||
| Turn-off delay time | td(off) | 16 | ns | |||
| Turn-off fall time | tf | 22 | ns | |||
| Total gate charge | Qg | 28 | nC | VDS=30V,VGS=10V, ID=20A | ||
| Gate-source charge | Qgs | 5 | nC | |||
| Gate-drain charge | Qgd | 6.5 | nC | |||
| Diode forward voltage | VSD | 1.2 | V | IS=15A,VGS=0V | ||
| Max. forward current | IS | 20 | A | |||
| Pulsed drain-source diode forward current | ISM | 60 | A | |||
2410121918_Guangdong-Hottech-HKTD20N06_C5364290.pdf
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