switching MOSFET GOODWORK RK7002BM-GK plastic encapsulated device with high density cell design and performance
Key Attributes
Model Number:
RK7002BM-GK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
40pF
Gate Charge(Qg):
-
Mfr. Part #:
RK7002BM-GK
Package:
SOT-23
Product Description
Product Overview
The RK7002BM is a professional semiconductor device, a plastic-encapsulated MOSFET designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), a rugged and reliable construction, and high saturation current capability. This MOSFET is suitable for various applications requiring efficient and dependable switching performance.
Product Attributes
- Brand: gk-goodwork.com
- Product Name: RK7002BM
- Package Type: SOT-23
- Material: Plastic-Encapsulate
- Revision: 2.0
- Date: 2025 JAN
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 2.5 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS1 | VGS =20V, VDS = 0V | 10 | A | ||
| Gate Source leakage current | IGSS2 | VGS =10V, VDS = 0V | 200 | nA | ||
| Gate Source leakage current | IGSS3 | VGS =5V, VDS = 0V | 100 | nA | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID =200mA | 5.3 | |||
| Drain-Source On-Resistance | RDS(on) | VGS =10V,ID =500mA | 5 | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | nC | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 10 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 15 | ns | ||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | ns | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA (Open Drain) | 21.5 | 30 | V | |
| Drain Current | ID | Pulsed, Ta=25 | 340 | mA | ||
| Power Dissipation | PD | 0.35 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | |||
| Gate-Source voltage | VGS | Absolute Maximum Ratings | 20 | V | ||
| Drain-Source voltage | VDS | Absolute Maximum Ratings | 60 | V |
2512011128_GOODWORK-RK7002BM-GK_C42417816.pdf
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